Figure 1
GISAXS intensity distributions and corresponding STEM images shown in insets measured on different films containing Ge QD lattices in amorphous matrices. (a) (Ge+SiO2)/SiO2 multilayer deposited on a flat substrate at 773 K, and annealed at 1073 K after the deposition. (b) (Ge+Al2O3)/Al2O3 multilayer deposited on a flat substrate at 773 K. (c) (Ge+SiO2)/SiO2 multilayer deposited at room temperature and irradiated with 3 MeV O3+ ions. The multilayer was annealed at 1073 K after the irradiation. (d) Ge+Al2O3 continuous thick film deposited on a flat substrate at 773 K.  [article HTML]