Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III–V and II–VI semiconductors

Schowalter, M.; Müller, K.; Rosenauer, A.

doi:10.1107/S0108767311037779

Figure 2
002 MASAs for Ga and As in GaAs, as well as MASAs for Ga and N in GaN are compared with the respective ASAs in the four different strain states considered in this paper. MASAs are plotted as function of N concentration.