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Figure 6
Calculated intensity at the symmetry centre versus q for a bent Si 111 crystal, energy 8.3 keV, p = 29 700 mm, [\theta_{\rm B} = 13.73^\circ], [{\chi _h}{\chi _{\overline h}} =] 5.781×10 - 11 + i 3.260×10 - 12. (a) Crystal thickness = 200 µm, (b) crystal thickness = 300 µm.

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