Figure 5
HAADF-STEM image of AlN grown on Si. Note the amorphous region about 2 nm thick at the interface. Cs-corrected FEI Titan 80-300 operated at 300 kV, spot size ~1 Å. Reproduced with permission from Radtke et al. (2010)BB15. Copyright (2010), American Institute of Physics.  [article HTML]