Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M.V.; Bert, N.A.; Chaldyshev, V.V.; Nevedomsky, V.N.; Yagovkina, M.A.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.

doi:10.1107/S2052519213000183

Figure 4
X-ray reflectivity curves for the LT-GaAs samples [delta]

-doped with P (1,2) and Sb (3,4). Curves 1 and 3 were recorded in the as-grown state. Curves 2 and 4 were taken after annealing at 873 K for 15 min. The curves are shifted along the vertical axis for clarity.