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Acta Cryst. (2014). C70, 118-122  [ doi:10.1107/S2053229613032336 ]

Manipulating topological phase transition by strain

J. Liu, Y. Xu, J. Wu, B.-L. Gu, S. B. Zhang and W. Duan

Synopsis: First-principles calculations show that strain-induced topological phase transition is a universal phenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities.

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