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The title compound, [SiH2(C6H7N)4]Br2·6CHCl3 or C24H30N4Si2+·2Br-·6CHCl3, contains a hexacoordinated Si atom located on a crystallographic centre of inversion. The coordination of the Si atom can be described as a slightly distorted octahedron, with the 4-picoline ligands in the equatorial plane and the two H atoms occupying axial positions. The title compound is isomorphous with its analogue where the Br- ions are substituted by Cl- ions.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S1600536801002227/cf6044sup1.cif
Contains datablocks I, global

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S1600536801002227/cf6044Isup2.hkl
Contains datablock I

CCDC reference: 159843

Key indicators

  • Single-crystal X-ray study
  • T = 173 K
  • Mean [sigma](C-C) = 0.008 Å
  • R factor = 0.054
  • wR factor = 0.148
  • Data-to-parameter ratio = 18.4

checkCIF results

No syntax errors found

ADDSYM reports no extra symmetry


Yellow Alert Alert Level C:
PLAT_420 Alert C D-H Without Acceptor Si1 - H1SI ? PLAT_731 Alert C Bond Calc 1.41(4), Rep 1.400(10) .... 4.00 s.u-Ratio SI1 -H1SI 1.555 1.555 PLAT_731 Alert C Bond Calc 1.41(4), Rep 1.402(10) .... 4.00 s.u-Ratio SI1 -H1SI 1.555 1.555
0 Alert Level A = Potentially serious problem
0 Alert Level B = Potential problem
3 Alert Level C = Please check

Comment top

The title compound, (I), is isomorphous with its analogue where the Cl- ions are substituted by Br- ions (Stumpf & Bolte, 2001).

Experimental top

The title compound was prepared as described by Faber (2000).

Refinement top

All H atoms bonded to C atoms were located by difference Fourier synthesis and refined with fixed individual displacement parameters [U(H) = 1.5Ueq(Cmethyl) or U(H) = 1.2Ueq(C)] using a riding model with C—H(aromatic) = 0.95, CH(methyl) = 0.98 or C—H(tertiary) = 1.00 Å. The methyl groups attached to the aromatic rings were allowed to rotate about their local threefold axis. The H atom bonded to Si was refined isotropically applying a restraint of 1.40 (1) Å to the Si—H distance

Computing details top

Data collection: SMART (Siemens, 1995); cell refinement: SMART; data reduction: SAINT (Siemens, 1995); program(s) used to solve structure: SHELXS97 (Sheldrick, 1990); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: XP in SHELXTL-Plus (Sheldrick, 1991); software used to prepare material for publication: SHELXL97).

Figures top
[Figure 1] Fig. 1. A perspective view of the cation of (I) with the atom-numbering scheme. Displacement ellipsoids are at the 50% probability level and H atoms are drawn as small spheres of arbitrary radii.
[Figure 2] Fig. 2. A perspective view of the anion and the solvent molecules of (I) with the atom-numbering scheme. Displacement ellipsoids are at the 50% probability level and H atoms are drawn as small spheres of arbitrary radii.
(I) top
Crystal data top
C24H30N4Si2+·2Br·6CHCl3Z = 1
Mr = 1278.64F(000) = 634
Triclinic, P1Dx = 1.588 Mg m3
a = 9.506 (1) ÅMo Kα radiation, λ = 0.71073 Å
b = 11.337 (2) ÅCell parameters from 8192 reflections
c = 12.960 (2) Åθ = 1–25°
α = 92.28 (1)°µ = 2.47 mm1
β = 104.06 (1)°T = 173 K
γ = 98.20 (1)°Needle, colourless
V = 1337.0 (3) Å30.6 × 0.4 × 0.3 mm
Data collection top
Siemens CCD three-circle
diffractometer
4721 independent reflections
Radiation source: fine-focus sealed tube3954 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.027
ω scansθmax = 25.0°, θmin = 1.6°
Absorption correction: empirical (using intensity measurements)
(SADABS; Sheldrick, 1996)
h = 118
Tmin = 0.290, Tmax = 0.477k = 1313
15431 measured reflectionsl = 1515
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.054Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.148H atoms treated by a mixture of independent and constrained refinement
S = 1.03 w = 1/[σ2(Fo2) + (0.0746P)2 + 3.3546P]
where P = (Fo2 + 2Fc2)/3
4721 reflections(Δ/σ)max = 0.020
256 parametersΔρmax = 1.98 e Å3
1 restraintΔρmin = 0.75 e Å3
Crystal data top
C24H30N4Si2+·2Br·6CHCl3γ = 98.20 (1)°
Mr = 1278.64V = 1337.0 (3) Å3
Triclinic, P1Z = 1
a = 9.506 (1) ÅMo Kα radiation
b = 11.337 (2) ŵ = 2.47 mm1
c = 12.960 (2) ÅT = 173 K
α = 92.28 (1)°0.6 × 0.4 × 0.3 mm
β = 104.06 (1)°
Data collection top
Siemens CCD three-circle
diffractometer
4721 independent reflections
Absorption correction: empirical (using intensity measurements)
(SADABS; Sheldrick, 1996)
3954 reflections with I > 2σ(I)
Tmin = 0.290, Tmax = 0.477Rint = 0.027
15431 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0541 restraint
wR(F2) = 0.148H atoms treated by a mixture of independent and constrained refinement
S = 1.03Δρmax = 1.98 e Å3
4721 reflectionsΔρmin = 0.75 e Å3
256 parameters
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
Si10.00000.50000.00000.0456 (5)
H1SI0.119 (4)0.484 (5)0.043 (4)0.066 (17)*
N10.1122 (4)0.6524 (3)0.0707 (3)0.0427 (9)
C10.2366 (5)0.6997 (4)0.0467 (4)0.0394 (10)
H10.26860.65900.00670.047*
C20.3194 (5)0.8046 (4)0.0965 (4)0.0423 (11)
H20.40610.83580.07620.051*
C30.2779 (6)0.8657 (4)0.1761 (4)0.0430 (11)
C40.1473 (6)0.8167 (5)0.1997 (4)0.0517 (13)
H40.11340.85570.25310.062*
C50.0679 (6)0.7129 (5)0.1459 (5)0.0531 (13)
H50.02190.68200.16210.064*
C60.3673 (8)0.9793 (5)0.2340 (5)0.0702 (18)
H6A0.45940.96200.27950.105*
H6B0.31191.01510.27830.105*
H6C0.38901.03530.18220.105*
N20.0811 (4)0.4191 (3)0.1267 (4)0.0446 (10)
C110.0148 (5)0.4081 (5)0.2073 (4)0.0484 (12)
H110.07460.43870.20110.058*
C120.0707 (6)0.3549 (6)0.2977 (5)0.0584 (15)
H120.02090.35010.35300.070*
C130.2009 (6)0.3075 (6)0.3090 (5)0.0617 (16)
C140.2665 (6)0.3168 (5)0.2249 (5)0.0604 (16)
H140.35410.28440.22800.072*
C150.2060 (6)0.3725 (5)0.1375 (5)0.0556 (15)
H150.25440.37870.08140.067*
C160.2627 (10)0.2464 (10)0.4067 (6)0.112 (3)
H16A0.22370.16080.39520.168*
H16B0.23490.28090.46800.168*
H16C0.37000.25760.42070.168*
Br10.62702 (5)0.26124 (4)0.19112 (4)0.04181 (17)
C310.6179 (6)0.5627 (5)0.2525 (5)0.0553 (14)
H310.60140.47350.25200.066*
Cl20.49222 (18)0.61836 (16)0.31322 (14)0.0718 (4)
Cl30.5892 (2)0.60163 (17)0.11939 (13)0.0750 (5)
Cl40.80040 (17)0.61693 (15)0.32598 (14)0.0706 (4)
C410.7651 (7)0.2137 (6)0.4654 (5)0.0657 (16)
H410.74200.21520.38600.079*
Cl50.8022 (3)0.3594 (2)0.5238 (2)0.1168 (8)
Cl60.9219 (2)0.1459 (2)0.50962 (17)0.1009 (7)
Cl70.6168 (2)0.1328 (2)0.50171 (17)0.1016 (7)
C510.7942 (6)0.0162 (5)0.1363 (4)0.0553 (14)
H510.73470.08190.13840.066*
Cl80.8133 (3)0.0525 (3)0.25644 (15)0.1126 (9)
Cl90.96476 (18)0.07808 (15)0.11516 (19)0.0869 (6)
Cl100.69904 (19)0.08931 (13)0.03056 (13)0.0665 (4)
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
Si10.0434 (10)0.0317 (9)0.0641 (12)0.0087 (8)0.0286 (9)0.0077 (8)
N10.040 (2)0.0303 (19)0.059 (3)0.0047 (16)0.0232 (19)0.0030 (18)
C10.036 (2)0.032 (2)0.055 (3)0.0036 (19)0.022 (2)0.006 (2)
C20.034 (2)0.038 (3)0.054 (3)0.003 (2)0.013 (2)0.010 (2)
C30.049 (3)0.030 (2)0.044 (3)0.002 (2)0.005 (2)0.006 (2)
C40.062 (3)0.039 (3)0.058 (3)0.000 (2)0.027 (3)0.007 (2)
C50.047 (3)0.049 (3)0.069 (3)0.006 (2)0.034 (3)0.007 (3)
C60.085 (5)0.051 (3)0.058 (4)0.025 (3)0.009 (3)0.003 (3)
N20.039 (2)0.029 (2)0.066 (3)0.0087 (16)0.025 (2)0.0111 (18)
C110.034 (2)0.052 (3)0.063 (3)0.006 (2)0.022 (2)0.008 (2)
C120.050 (3)0.077 (4)0.051 (3)0.019 (3)0.016 (3)0.008 (3)
C130.041 (3)0.077 (4)0.060 (3)0.012 (3)0.001 (3)0.020 (3)
C140.030 (3)0.055 (3)0.094 (5)0.001 (2)0.019 (3)0.020 (3)
C150.041 (3)0.043 (3)0.090 (4)0.004 (2)0.038 (3)0.011 (3)
C160.090 (6)0.174 (9)0.071 (5)0.074 (6)0.009 (4)0.011 (5)
Br10.0402 (3)0.0343 (3)0.0558 (3)0.00449 (19)0.0228 (2)0.00141 (19)
C310.053 (3)0.045 (3)0.067 (4)0.005 (2)0.017 (3)0.009 (3)
Cl20.0631 (9)0.0792 (11)0.0768 (10)0.0119 (8)0.0273 (8)0.0116 (8)
Cl30.0831 (11)0.0857 (12)0.0646 (9)0.0302 (9)0.0246 (8)0.0048 (8)
Cl40.0504 (8)0.0731 (10)0.0827 (11)0.0020 (7)0.0139 (7)0.0174 (8)
C410.058 (4)0.072 (4)0.060 (4)0.001 (3)0.006 (3)0.007 (3)
Cl50.155 (2)0.0711 (13)0.1175 (18)0.0053 (14)0.0301 (16)0.0071 (12)
Cl60.0768 (12)0.1359 (19)0.0813 (12)0.0357 (12)0.0038 (10)0.0143 (12)
Cl70.0639 (11)0.1295 (18)0.0934 (14)0.0177 (11)0.0007 (10)0.0397 (13)
C510.062 (3)0.049 (3)0.055 (3)0.022 (3)0.008 (3)0.003 (2)
Cl80.143 (2)0.154 (2)0.0550 (10)0.0752 (18)0.0215 (11)0.0216 (12)
Cl90.0529 (9)0.0564 (9)0.1363 (17)0.0028 (7)0.0007 (10)0.0005 (10)
Cl100.0774 (10)0.0497 (8)0.0677 (9)0.0097 (7)0.0223 (8)0.0042 (7)
Geometric parameters (Å, º) top
Si1—H1SI1.40 (1)C11—H110.950
Si1—N1i1.958 (4)C12—C131.396 (8)
Si1—N11.958 (4)C12—H120.950
Si1—N21.959 (5)C13—C141.382 (9)
Si1—N2i1.959 (5)C13—C161.501 (10)
Si1—H1SI1.402 (10)C14—C151.362 (9)
N1—C11.339 (6)C14—H140.950
N1—C51.352 (6)C15—H150.950
C1—C21.370 (7)C16—H16A0.980
C1—H10.950C16—H16B0.980
C2—C31.385 (7)C16—H16C0.980
C2—H20.950C31—Cl21.754 (6)
C3—C41.395 (7)C31—Cl31.764 (6)
C3—C61.499 (7)C31—Cl41.772 (6)
C4—C51.366 (7)C31—H311.000
C4—H40.950C41—Cl51.741 (7)
C5—H50.950C41—Cl71.743 (7)
C6—H6A0.980C41—Cl61.757 (7)
C6—H6B0.980C41—H411.000
C6—H6C0.980C51—Cl81.751 (6)
N2—C151.346 (7)C51—Cl101.756 (6)
N2—C111.347 (6)C51—Cl91.761 (6)
C11—C121.365 (8)C51—H511.000
H1SI—Si1—N1i91 (2)C11—N2—Si1121.4 (4)
H1SI—Si1—N189 (2)N2—C11—C12122.7 (5)
N1i—Si1—N1180.00 (14)N2—C11—H11118.6
H1SI—Si1—N291 (2)C12—C11—H11118.6
N1i—Si1—N290.21 (17)C11—C12—C13120.2 (5)
N1—Si1—N289.79 (17)C11—C12—H12119.9
H1SI—Si1—N2i89 (2)C13—C12—H12119.9
N1i—Si1—N2i89.79 (17)C14—C13—C12116.6 (6)
N1—Si1—N2i90.22 (17)C14—C13—C16122.2 (6)
N2—Si1—N2i180.0C12—C13—C16121.1 (6)
H1SI—Si1—H1SI0 (6)C15—C14—C13120.2 (5)
N1i—Si1—H1SI91 (2)C15—C14—H14119.9
N1—Si1—H1SI89 (2)C13—C14—H14119.9
N2—Si1—H1SI91 (2)N2—C15—C14123.3 (5)
N2i—Si1—H1SI89 (2)N2—C15—H15118.4
C1—N1—C5117.7 (4)C14—C15—H15118.4
C1—N1—Si1121.0 (3)C13—C16—H16A109.5
C5—N1—Si1121.4 (3)C13—C16—H16B109.5
N1—C1—C2122.4 (4)H16A—C16—H16B109.5
N1—C1—H1118.8C13—C16—H16C109.5
C2—C1—H1118.8H16A—C16—H16C109.5
C1—C2—C3120.6 (4)H16B—C16—H16C109.5
C1—C2—H2119.7Cl2—C31—Cl3110.3 (3)
C3—C2—H2119.7Cl2—C31—Cl4110.4 (3)
C2—C3—C4116.7 (4)Cl3—C31—Cl4110.9 (3)
C2—C3—C6122.2 (5)Cl2—C31—H31108.4
C4—C3—C6121.1 (5)Cl3—C31—H31108.4
C5—C4—C3120.1 (5)Cl4—C31—H31108.4
C5—C4—H4120.0Cl5—C41—Cl7110.5 (4)
C3—C4—H4120.0Cl5—C41—Cl6108.3 (3)
N1—C5—C4122.5 (5)Cl7—C41—Cl6109.6 (4)
N1—C5—H5118.7Cl5—C41—H41109.5
C4—C5—H5118.7Cl7—C41—H41109.5
C3—C6—H6A109.5Cl6—C41—H41109.5
C3—C6—H6B109.5Cl8—C51—Cl10109.0 (3)
H6A—C6—H6B109.5Cl8—C51—Cl9112.3 (3)
C3—C6—H6C109.5Cl10—C51—Cl9110.0 (3)
H6A—C6—H6C109.5Cl8—C51—H51108.5
H6B—C6—H6C109.5Cl10—C51—H51108.5
C15—N2—C11116.9 (5)Cl9—C51—H51108.5
C15—N2—Si1121.7 (4)
H1SI—Si1—N1—C110 (2)H1SI—Si1—N2—C152 (2)
N2—Si1—N1—C1101.7 (4)N1i—Si1—N2—C1589.3 (4)
N2i—Si1—N1—C178.3 (4)N1—Si1—N2—C1590.7 (4)
H1SI—Si1—N1—C5169 (2)H1SI—Si1—N2—C11177 (2)
N2—Si1—N1—C577.6 (4)N1i—Si1—N2—C1191.1 (4)
N2i—Si1—N1—C5102.4 (4)N1—Si1—N2—C1188.9 (4)
C5—N1—C1—C20.9 (7)C15—N2—C11—C121.3 (7)
Si1—N1—C1—C2178.4 (4)Si1—N2—C11—C12178.3 (4)
N1—C1—C2—C31.1 (7)N2—C11—C12—C130.9 (9)
C1—C2—C3—C41.9 (7)C11—C12—C13—C140.5 (9)
C1—C2—C3—C6178.7 (5)C11—C12—C13—C16178.8 (7)
C2—C3—C4—C50.7 (8)C12—C13—C14—C151.4 (8)
C6—C3—C4—C5179.9 (6)C16—C13—C14—C15179.6 (7)
C1—N1—C5—C42.2 (8)C11—N2—C15—C140.4 (7)
Si1—N1—C5—C4177.2 (5)Si1—N2—C15—C14179.2 (4)
C3—C4—C5—N11.4 (9)C13—C14—C15—N21.0 (8)
Symmetry code: (i) x, y+1, z.

Experimental details

Crystal data
Chemical formulaC24H30N4Si2+·2Br·6CHCl3
Mr1278.64
Crystal system, space groupTriclinic, P1
Temperature (K)173
a, b, c (Å)9.506 (1), 11.337 (2), 12.960 (2)
α, β, γ (°)92.28 (1), 104.06 (1), 98.20 (1)
V3)1337.0 (3)
Z1
Radiation typeMo Kα
µ (mm1)2.47
Crystal size (mm)0.6 × 0.4 × 0.3
Data collection
DiffractometerSiemens CCD three-circle
diffractometer
Absorption correctionEmpirical (using intensity measurements)
(SADABS; Sheldrick, 1996)
Tmin, Tmax0.290, 0.477
No. of measured, independent and
observed [I > 2σ(I)] reflections
15431, 4721, 3954
Rint0.027
(sin θ/λ)max1)0.595
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.054, 0.148, 1.03
No. of reflections4721
No. of parameters256
No. of restraints1
H-atom treatmentH atoms treated by a mixture of independent and constrained refinement
Δρmax, Δρmin (e Å3)1.98, 0.75

Computer programs: SMART (Siemens, 1995), SMART, SAINT (Siemens, 1995), SHELXS97 (Sheldrick, 1990), SHELXL97 (Sheldrick, 1997), XP in SHELXTL-Plus (Sheldrick, 1991), SHELXL97).

Selected geometric parameters (Å, º) top
Si1—N11.958 (4)Si1—N21.959 (5)
H1SI—Si1—N291 (2)N1—Si1—N289.79 (17)
 

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