Supporting information
Crystallographic Information File (CIF) https://doi.org/10.1107/S1600536805040262/wm6126sup1.cif | |
Structure factor file (CIF format) https://doi.org/10.1107/S1600536805040262/wm6126Isup2.hkl |
Key indicators
- Single-crystal X-ray study
- T = 295 K
- Mean (i-Si) = 0.001 Å
- R factor = 0.025
- wR factor = 0.057
- Data-to-parameter ratio = 15.6
checkCIF/PLATON results
No syntax errors found
Alert level G ABSTM02_ALERT_3_G The ratio of expected to reported Tmax/Tmin(RR) is > 1.50 Tmin and Tmax reported: 0.002 0.199 Tmin and Tmax expected: 0.001 0.198 RR = 1.576 Please check that your absorption correction is appropriate.
0 ALERT level A = In general: serious problem 0 ALERT level B = Potentially serious problem 0 ALERT level C = Check and explain 1 ALERT level G = General alerts; check 0 ALERT type 1 CIF construction/syntax error, inconsistent or missing data 0 ALERT type 2 Indicator that the structure model may be wrong or deficient 1 ALERT type 3 Indicator that the structure quality may be low 0 ALERT type 4 Improvement, methodology, query or suggestion
The single-crystal used in this work was extracted from an alloy with nominal composition Er23Ni27Si50, which was prepared by arc melting of the initial components (purity better than 99.9%) in an electric arc furnace with a water-cooled copper bottom (Ti-getter) under an argon atmosphere, and annealwed at 870 K. A preliminary crystal investigation was performed using Laue and rotation methods (RKV-86 and RGNS-2 chambers, Mo Kα radiation).
Atomic coordinates were standardized using the STRUCTURETIDY program (Gelato & Parthé, 1987). The highest maximum residual electron density is 1.06 Å from atom Si1 and the deepest hole is 0.65 Å from the Er atom.
Data collection: CrysAlis CCD (Oxford Diffraction, 2004); cell refinement: CrysAlis CCD; data reduction: CrysAlis RED (Oxford Diffraction, 2005); program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: DIAMOND (Brandenburg, 1999); software used to prepare material for publication: SHELXL97 (Sheldrick, 1997).
ErNiSi2 | F(000) = 496 |
Mr = 282.15 | Dx = 7.327 Mg m−3 |
Orthorhombic, Cmcm | Mo Kα radiation, λ = 0.71073 Å |
Hall symbol: -C 2c 2 | Cell parameters from 1017 reflections |
a = 3.9423 (9) Å | θ = 4.9–32.7° |
b = 16.502 (3) Å | µ = 40.49 mm−1 |
c = 3.9319 (9) Å | T = 295 K |
V = 255.79 (9) Å3 | Plate, metallic light grey |
Z = 4 | 0.21 × 0.19 × 0.04 mm |
Oxford Diffraction Xcalibur3 CCD area-detector diffractometer | 281 independent reflections |
Radiation source: fine-focus sealed tube | 280 reflections with I > 2σ(I) |
Graphite monochromator | Rint = 0.039 |
ω scans | θmax = 32.7°, θmin = 4.9° |
Absorption correction: analytical CrysAlis RED (Oxford Diffraction, 2005) | h = −5→4 |
Tmin = 0.002, Tmax = 0.199 | k = −24→23 |
1025 measured reflections | l = −5→5 |
Refinement on F2 | Primary atom site location: structure-invariant direct methods |
Least-squares matrix: full | Secondary atom site location: difference Fourier map |
R[F2 > 2σ(F2)] = 0.025 | w = 1/[σ2(Fo2) + (0.023P)2 + 5.5174P] where P = (Fo2 + 2Fc2)/3 |
wR(F2) = 0.057 | (Δ/σ)max < 0.001 |
S = 1.33 | Δρmax = 4.29 e Å−3 |
281 reflections | Δρmin = −2.85 e Å−3 |
18 parameters | Extinction correction: SHELXL97 (Sheldrick, 1997), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4 |
0 restraints | Extinction coefficient: 0.0048 (7) |
ErNiSi2 | V = 255.79 (9) Å3 |
Mr = 282.15 | Z = 4 |
Orthorhombic, Cmcm | Mo Kα radiation |
a = 3.9423 (9) Å | µ = 40.49 mm−1 |
b = 16.502 (3) Å | T = 295 K |
c = 3.9319 (9) Å | 0.21 × 0.19 × 0.04 mm |
Oxford Diffraction Xcalibur3 CCD area-detector diffractometer | 281 independent reflections |
Absorption correction: analytical CrysAlis RED (Oxford Diffraction, 2005) | 280 reflections with I > 2σ(I) |
Tmin = 0.002, Tmax = 0.199 | Rint = 0.039 |
1025 measured reflections |
R[F2 > 2σ(F2)] = 0.025 | 18 parameters |
wR(F2) = 0.057 | 0 restraints |
S = 1.33 | Δρmax = 4.29 e Å−3 |
281 reflections | Δρmin = −2.85 e Å−3 |
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes. |
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger. |
x | y | z | Uiso*/Ueq | ||
Er | 0.0000 | 0.10553 (2) | 0.2500 | 0.00534 (19) | |
Ni | 0.0000 | 0.32389 (7) | 0.2500 | 0.0063 (3) | |
Si1 | 0.0000 | 0.46055 (16) | 0.2500 | 0.0062 (4) | |
Si2 | 0.0000 | 0.74973 (16) | 0.2500 | 0.0060 (5) |
U11 | U22 | U33 | U12 | U13 | U23 | |
Er | 0.0039 (2) | 0.0069 (2) | 0.0052 (2) | 0.000 | 0.000 | 0.000 |
Ni | 0.0057 (5) | 0.0064 (5) | 0.0069 (5) | 0.000 | 0.000 | 0.000 |
Si1 | 0.0066 (10) | 0.0068 (10) | 0.0052 (11) | 0.000 | 0.000 | 0.000 |
Si2 | 0.0054 (10) | 0.0050 (8) | 0.0075 (12) | 0.000 | 0.000 | 0.000 |
Er—Si1i | 2.9899 (10) | Ni—Eri | 3.0178 (6) |
Er—Si1ii | 2.9899 (10) | Ni—Eriv | 3.0178 (6) |
Er—Si1iii | 2.9899 (10) | Ni—Eriii | 3.0178 (6) |
Er—Si1iv | 2.9899 (10) | Si1—Si1vii | 2.358 (3) |
Er—Niii | 3.0178 (6) | Si1—Si1viii | 2.358 (3) |
Er—Nii | 3.0178 (6) | Si1—Eri | 2.9899 (10) |
Er—Niiv | 3.0178 (6) | Si1—Erii | 2.9899 (10) |
Er—Niiii | 3.0178 (6) | Si1—Eriv | 2.9899 (10) |
Er—Si2v | 3.090 (2) | Si1—Eriii | 2.9899 (10) |
Er—Si2vi | 3.090 (2) | Si1—Erxiii | 3.100 (2) |
Er—Si2vii | 3.094 (2) | Si1—Erxiv | 3.100 (2) |
Er—Si2viii | 3.094 (2) | Si2—Niviii | 2.3110 (15) |
Er—Si1vi | 3.100 (2) | Si2—Nivii | 2.3110 (15) |
Er—Si1v | 3.100 (2) | Si2—Nixiii | 2.3202 (15) |
Er—Erix | 3.9319 (9) | Si2—Nixiv | 2.3202 (15) |
Er—Erx | 3.9319 (9) | Si2—Si2xv | 2.7840 (5) |
Er—Erxi | 3.9423 (9) | Si2—Si2xvi | 2.7840 (5) |
Er—Erxii | 3.9423 (9) | Si2—Si2xvii | 2.7840 (5) |
Ni—Si1 | 2.255 (3) | Si2—Si2xviii | 2.7840 (5) |
Ni—Si2viii | 2.3110 (15) | Si2—Erxiv | 3.090 (2) |
Ni—Si2vii | 2.3110 (15) | Si2—Erxiii | 3.090 (2) |
Ni—Si2vi | 2.3202 (15) | Si2—Ervii | 3.094 (2) |
Ni—Si2v | 2.3202 (15) | Si2—Erviii | 3.094 (2) |
Ni—Erii | 3.0178 (6) | ||
Si1i—Er—Si1ii | 137.22 (9) | Si2vii—Er—Erxii | 90.0 |
Si1i—Er—Si1iii | 82.22 (4) | Si2viii—Er—Erxii | 90.0 |
Si1ii—Er—Si1iii | 82.49 (4) | Si1vi—Er—Erxii | 129.49 (3) |
Si1i—Er—Si1iv | 82.49 (4) | Si1v—Er—Erxii | 50.51 (3) |
Si1ii—Er—Si1iv | 82.22 (4) | Erix—Er—Erxii | 90.0 |
Si1iii—Er—Si1iv | 137.22 (9) | Erx—Er—Erxii | 90.0 |
Si1i—Er—Niii | 178.69 (5) | Erxi—Er—Erxii | 180.00 (2) |
Si1ii—Er—Niii | 44.09 (6) | Si1—Ni—Si2viii | 121.71 (6) |
Si1iii—Er—Niii | 98.22 (3) | Si1—Ni—Si2vii | 121.71 (6) |
Si1iv—Er—Niii | 97.96 (3) | Si2viii—Ni—Si2vii | 116.57 (12) |
Si1i—Er—Nii | 44.09 (6) | Si1—Ni—Si2vi | 121.83 (6) |
Si1ii—Er—Nii | 178.69 (5) | Si2viii—Ni—Si2vi | 73.90 (2) |
Si1iii—Er—Nii | 97.96 (3) | Si2vii—Ni—Si2vi | 73.90 (2) |
Si1iv—Er—Nii | 98.22 (3) | Si1—Ni—Si2v | 121.83 (6) |
Niii—Er—Nii | 134.59 (4) | Si2viii—Ni—Si2v | 73.90 (2) |
Si1i—Er—Niiv | 98.22 (3) | Si2vii—Ni—Si2v | 73.90 (2) |
Si1ii—Er—Niiv | 97.96 (3) | Si2vi—Ni—Si2v | 116.33 (12) |
Si1iii—Er—Niiv | 178.69 (5) | Si1—Ni—Erii | 67.30 (2) |
Si1iv—Er—Niiv | 44.09 (6) | Si2viii—Ni—Erii | 139.207 (12) |
Niii—Er—Niiv | 81.30 (2) | Si2vii—Ni—Erii | 69.43 (4) |
Nii—Er—Niiv | 81.56 (2) | Si2vi—Ni—Erii | 139.332 (12) |
Si1i—Er—Niiii | 97.96 (3) | Si2v—Ni—Erii | 69.43 (4) |
Si1ii—Er—Niiii | 98.22 (3) | Si1—Ni—Eri | 67.30 (2) |
Si1iii—Er—Niiii | 44.09 (6) | Si2viii—Ni—Eri | 69.43 (4) |
Si1iv—Er—Niiii | 178.69 (5) | Si2vii—Ni—Eri | 139.207 (12) |
Niii—Er—Niiii | 81.56 (2) | Si2vi—Ni—Eri | 69.43 (4) |
Nii—Er—Niiii | 81.30 (2) | Si2v—Ni—Eri | 139.332 (12) |
Niiv—Er—Niiii | 134.59 (4) | Erii—Ni—Eri | 134.59 (4) |
Si1i—Er—Si2v | 134.54 (4) | Si1—Ni—Eriv | 67.30 (2) |
Si1ii—Er—Si2v | 81.97 (5) | Si2viii—Ni—Eriv | 69.43 (4) |
Si1iii—Er—Si2v | 134.54 (4) | Si2vii—Ni—Eriv | 139.207 (12) |
Si1iv—Er—Si2v | 81.97 (5) | Si2vi—Ni—Eriv | 139.332 (12) |
Niii—Er—Si2v | 44.45 (2) | Si2v—Ni—Eriv | 69.43 (4) |
Nii—Er—Si2v | 96.86 (3) | Erii—Ni—Eriv | 81.30 (2) |
Niiv—Er—Si2v | 44.45 (2) | Eri—Ni—Eriv | 81.56 (2) |
Niiii—Er—Si2v | 96.86 (3) | Si1—Ni—Eriii | 67.30 (2) |
Si1i—Er—Si2vi | 81.97 (5) | Si2viii—Ni—Eriii | 139.207 (12) |
Si1ii—Er—Si2vi | 134.54 (4) | Si2vii—Ni—Eriii | 69.43 (4) |
Si1iii—Er—Si2vi | 81.97 (5) | Si2vi—Ni—Eriii | 69.43 (4) |
Si1iv—Er—Si2vi | 134.54 (4) | Si2v—Ni—Eriii | 139.332 (12) |
Niii—Er—Si2vi | 96.86 (3) | Erii—Ni—Eriii | 81.56 (2) |
Nii—Er—Si2vi | 44.45 (2) | Eri—Ni—Eriii | 81.30 (2) |
Niiv—Er—Si2vi | 96.86 (3) | Eriv—Ni—Eriii | 134.59 (4) |
Niiii—Er—Si2vi | 44.45 (2) | Ni—Si1—Si1vii | 123.51 (11) |
Si2v—Er—Si2vi | 79.27 (6) | Ni—Si1—Si1viii | 123.51 (11) |
Si1i—Er—Si2vii | 134.38 (4) | Si1vii—Si1—Si1viii | 113.0 (2) |
Si1ii—Er—Si2vii | 82.17 (5) | Ni—Si1—Eri | 68.61 (5) |
Si1iii—Er—Si2vii | 82.17 (5) | Si1vii—Si1—Eri | 138.56 (3) |
Si1iv—Er—Si2vii | 134.38 (4) | Si1viii—Si1—Eri | 69.71 (4) |
Niii—Er—Si2vii | 44.60 (2) | Ni—Si1—Erii | 68.61 (5) |
Nii—Er—Si2vii | 96.66 (3) | Si1vii—Si1—Erii | 69.71 (4) |
Niiv—Er—Si2vii | 96.66 (3) | Si1viii—Si1—Erii | 138.56 (3) |
Niiii—Er—Si2vii | 44.60 (2) | Eri—Si1—Erii | 137.22 (9) |
Si2v—Er—Si2vii | 53.516 (10) | Ni—Si1—Eriv | 68.61 (5) |
Si2vi—Er—Si2vii | 53.516 (10) | Si1vii—Si1—Eriv | 138.56 (3) |
Si1i—Er—Si2viii | 82.17 (5) | Si1viii—Si1—Eriv | 69.71 (4) |
Si1ii—Er—Si2viii | 134.38 (4) | Eri—Si1—Eriv | 82.49 (4) |
Si1iii—Er—Si2viii | 134.38 (4) | Erii—Si1—Eriv | 82.22 (4) |
Si1iv—Er—Si2viii | 82.17 (5) | Ni—Si1—Eriii | 68.61 (5) |
Niii—Er—Si2viii | 96.66 (3) | Si1vii—Si1—Eriii | 69.71 (4) |
Nii—Er—Si2viii | 44.60 (2) | Si1viii—Si1—Eriii | 138.56 (3) |
Niiv—Er—Si2viii | 44.60 (2) | Eri—Si1—Eriii | 82.22 (4) |
Niiii—Er—Si2viii | 96.66 (3) | Erii—Si1—Eriii | 82.49 (4) |
Si2v—Er—Si2viii | 53.516 (10) | Eriv—Si1—Eriii | 137.22 (9) |
Si2vi—Er—Si2viii | 53.516 (10) | Ni—Si1—Erxiii | 140.51 (3) |
Si2vii—Er—Si2viii | 78.91 (6) | Si1vii—Si1—Erxiii | 64.78 (9) |
Si1i—Er—Si1vi | 45.52 (5) | Si1viii—Si1—Erxiii | 64.78 (9) |
Si1ii—Er—Si1vi | 97.92 (2) | Eri—Si1—Erxiii | 134.48 (5) |
Si1iii—Er—Si1vi | 45.52 (5) | Erii—Si1—Erxiii | 82.08 (2) |
Si1iv—Er—Si1vi | 97.92 (2) | Eriv—Si1—Erxiii | 82.08 (2) |
Niii—Er—Si1vi | 135.50 (2) | Eriii—Si1—Erxiii | 134.48 (5) |
Nii—Er—Si1vi | 83.25 (3) | Ni—Si1—Erxiv | 140.51 (3) |
Niiv—Er—Si1vi | 135.50 (2) | Si1vii—Si1—Erxiv | 64.78 (9) |
Niiii—Er—Si1vi | 83.25 (3) | Si1viii—Si1—Erxiv | 64.78 (9) |
Si2v—Er—Si1vi | 179.85 (4) | Eri—Si1—Erxiv | 82.08 (2) |
Si2vi—Er—Si1vi | 100.88 (5) | Erii—Si1—Erxiv | 134.48 (5) |
Si2vii—Er—Si1vi | 126.58 (3) | Eriv—Si1—Erxiv | 134.48 (5) |
Si2viii—Er—Si1vi | 126.58 (3) | Eriii—Si1—Erxiv | 82.08 (2) |
Si1i—Er—Si1v | 97.92 (2) | Erxiii—Si1—Erxiv | 78.97 (6) |
Si1ii—Er—Si1v | 45.52 (5) | Niviii—Si2—Nivii | 116.57 (12) |
Si1iii—Er—Si1v | 97.92 (2) | Niviii—Si2—Nixiii | 106.10 (2) |
Si1iv—Er—Si1v | 45.52 (5) | Nivii—Si2—Nixiii | 106.10 (2) |
Niii—Er—Si1v | 83.25 (3) | Niviii—Si2—Nixiv | 106.10 (2) |
Nii—Er—Si1v | 135.50 (2) | Nivii—Si2—Nixiv | 106.10 (2) |
Niiv—Er—Si1v | 83.25 (3) | Nixiii—Si2—Nixiv | 116.33 (12) |
Niiii—Er—Si1v | 135.50 (2) | Niviii—Si2—Si2xv | 127.04 (10) |
Si2v—Er—Si1v | 100.88 (5) | Nivii—Si2—Si2xv | 53.20 (5) |
Si2vi—Er—Si1v | 179.85 (4) | Nixiii—Si2—Si2xv | 52.90 (5) |
Si2vii—Er—Si1v | 126.58 (3) | Nixiv—Si2—Si2xv | 126.86 (10) |
Si2viii—Er—Si1v | 126.58 (3) | Niviii—Si2—Si2xvi | 53.20 (5) |
Si1vi—Er—Si1v | 78.97 (6) | Nivii—Si2—Si2xvi | 127.04 (10) |
Si1i—Er—Erix | 48.888 (18) | Nixiii—Si2—Si2xvi | 126.86 (10) |
Si1ii—Er—Erix | 131.112 (18) | Nixiv—Si2—Si2xvi | 52.90 (5) |
Si1iii—Er—Erix | 131.112 (18) | Si2xv—Si2—Si2xvi | 179.6 (2) |
Si1iv—Er—Erix | 48.888 (18) | Niviii—Si2—Si2xvii | 127.04 (10) |
Niii—Er—Erix | 130.652 (11) | Nivii—Si2—Si2xvii | 53.20 (5) |
Nii—Er—Erix | 49.348 (11) | Nixiii—Si2—Si2xvii | 126.86 (10) |
Niiv—Er—Erix | 49.348 (11) | Nixiv—Si2—Si2xvii | 52.90 (5) |
Niiii—Er—Erix | 130.652 (11) | Si2xv—Si2—Si2xvii | 90.151 (19) |
Si2v—Er—Erix | 90.0 | Si2xvi—Si2—Si2xvii | 89.848 (19) |
Si2vi—Er—Erix | 90.0 | Niviii—Si2—Si2xviii | 53.20 (5) |
Si2vii—Er—Erix | 129.46 (3) | Nivii—Si2—Si2xviii | 127.04 (10) |
Si2viii—Er—Erix | 50.54 (3) | Nixiii—Si2—Si2xviii | 52.90 (5) |
Si1vi—Er—Erix | 90.0 | Nixiv—Si2—Si2xviii | 126.86 (10) |
Si1v—Er—Erix | 90.0 | Si2xv—Si2—Si2xviii | 89.848 (19) |
Si1i—Er—Erx | 131.112 (18) | Si2xvi—Si2—Si2xviii | 90.151 (19) |
Si1ii—Er—Erx | 48.888 (18) | Si2xvii—Si2—Si2xviii | 179.6 (2) |
Si1iii—Er—Erx | 48.888 (18) | Niviii—Si2—Erxiv | 66.12 (5) |
Si1iv—Er—Erx | 131.112 (18) | Nivii—Si2—Erxiv | 66.12 (5) |
Niii—Er—Erx | 49.348 (11) | Nixiii—Si2—Erxiv | 161.47 (9) |
Nii—Er—Erx | 130.652 (11) | Nixiv—Si2—Erxiv | 82.20 (4) |
Niiv—Er—Erx | 130.652 (11) | Si2xv—Si2—Erxiv | 117.01 (11) |
Niiii—Er—Erx | 49.348 (11) | Si2xvi—Si2—Erxiv | 63.31 (7) |
Si2v—Er—Erx | 90.0 | Si2xvii—Si2—Erxiv | 63.31 (7) |
Si2vi—Er—Erx | 90.0 | Si2xviii—Si2—Erxiv | 117.01 (11) |
Si2vii—Er—Erx | 50.54 (3) | Niviii—Si2—Erxiii | 66.12 (5) |
Si2viii—Er—Erx | 129.46 (3) | Nivii—Si2—Erxiii | 66.12 (5) |
Si1vi—Er—Erx | 90.0 | Nixiii—Si2—Erxiii | 82.20 (4) |
Si1v—Er—Erx | 90.0 | Nixiv—Si2—Erxiii | 161.47 (9) |
Erix—Er—Erx | 180.000 (10) | Si2xv—Si2—Erxiii | 63.31 (7) |
Si1i—Er—Erxi | 48.756 (18) | Si2xvi—Si2—Erxiii | 117.01 (11) |
Si1ii—Er—Erxi | 131.244 (18) | Si2xvii—Si2—Erxiii | 117.01 (11) |
Si1iii—Er—Erxi | 48.756 (18) | Si2xviii—Si2—Erxiii | 63.31 (7) |
Si1iv—Er—Erxi | 131.244 (18) | Erxiv—Si2—Erxiii | 79.27 (6) |
Niii—Er—Erxi | 130.782 (11) | Niviii—Si2—Ervii | 161.17 (9) |
Nii—Er—Erxi | 49.218 (11) | Nivii—Si2—Ervii | 82.26 (4) |
Niiv—Er—Erxi | 130.782 (11) | Nixiii—Si2—Ervii | 65.97 (5) |
Niiii—Er—Erxi | 49.218 (11) | Nixiv—Si2—Ervii | 65.97 (5) |
Si2v—Er—Erxi | 129.64 (3) | Si2xv—Si2—Ervii | 63.18 (7) |
Si2vi—Er—Erxi | 50.36 (3) | Si2xvi—Si2—Ervii | 116.51 (11) |
Si2vii—Er—Erxi | 90.0 | Si2xvii—Si2—Ervii | 63.18 (7) |
Si2viii—Er—Erxi | 90.0 | Si2xviii—Si2—Ervii | 116.51 (11) |
Si1vi—Er—Erxi | 50.51 (3) | Erxiv—Si2—Ervii | 126.484 (10) |
Si1v—Er—Erxi | 129.49 (3) | Erxiii—Si2—Ervii | 126.484 (10) |
Erix—Er—Erxi | 90.0 | Niviii—Si2—Erviii | 82.26 (4) |
Erx—Er—Erxi | 90.0 | Nivii—Si2—Erviii | 161.17 (9) |
Si1i—Er—Erxii | 131.244 (18) | Nixiii—Si2—Erviii | 65.97 (5) |
Si1ii—Er—Erxii | 48.756 (18) | Nixiv—Si2—Erviii | 65.97 (5) |
Si1iii—Er—Erxii | 131.244 (18) | Si2xv—Si2—Erviii | 116.51 (11) |
Si1iv—Er—Erxii | 48.756 (18) | Si2xvi—Si2—Erviii | 63.18 (7) |
Niii—Er—Erxii | 49.218 (11) | Si2xvii—Si2—Erviii | 116.51 (11) |
Nii—Er—Erxii | 130.782 (11) | Si2xviii—Si2—Erviii | 63.18 (7) |
Niiv—Er—Erxii | 49.218 (11) | Erxiv—Si2—Erviii | 126.484 (10) |
Niiii—Er—Erxii | 130.782 (11) | Erxiii—Si2—Erviii | 126.484 (10) |
Si2v—Er—Erxii | 50.36 (3) | Ervii—Si2—Erviii | 78.91 (6) |
Si2vi—Er—Erxii | 129.64 (3) |
Symmetry codes: (i) −x−1/2, −y+1/2, −z; (ii) −x+1/2, −y+1/2, −z+1; (iii) −x−1/2, −y+1/2, −z+1; (iv) −x+1/2, −y+1/2, −z; (v) x+1/2, y−1/2, z; (vi) x−1/2, y−1/2, z; (vii) −x, −y+1, −z+1; (viii) −x, −y+1, −z; (ix) x, y, z−1; (x) x, y, z+1; (xi) x−1, y, z; (xii) x+1, y, z; (xiii) x+1/2, y+1/2, z; (xiv) x−1/2, y+1/2, z; (xv) −x+1/2, −y+3/2, −z+1; (xvi) −x−1/2, −y+3/2, −z; (xvii) −x−1/2, −y+3/2, −z+1; (xviii) −x+1/2, −y+3/2, −z. |
Experimental details
Crystal data | |
Chemical formula | ErNiSi2 |
Mr | 282.15 |
Crystal system, space group | Orthorhombic, Cmcm |
Temperature (K) | 295 |
a, b, c (Å) | 3.9423 (9), 16.502 (3), 3.9319 (9) |
V (Å3) | 255.79 (9) |
Z | 4 |
Radiation type | Mo Kα |
µ (mm−1) | 40.49 |
Crystal size (mm) | 0.21 × 0.19 × 0.04 |
Data collection | |
Diffractometer | Oxford Diffraction Xcalibur3 CCD area-detector diffractometer |
Absorption correction | Analytical CrysAlis RED (Oxford Diffraction, 2005) |
Tmin, Tmax | 0.002, 0.199 |
No. of measured, independent and observed [I > 2σ(I)] reflections | 1025, 281, 280 |
Rint | 0.039 |
(sin θ/λ)max (Å−1) | 0.760 |
Refinement | |
R[F2 > 2σ(F2)], wR(F2), S | 0.025, 0.057, 1.33 |
No. of reflections | 281 |
No. of parameters | 18 |
Δρmax, Δρmin (e Å−3) | 4.29, −2.85 |
Computer programs: CrysAlis CCD (Oxford Diffraction, 2004), CrysAlis CCD, CrysAlis RED (Oxford Diffraction, 2005), SHELXS97 (Sheldrick, 1997), SHELXL97 (Sheldrick, 1997), DIAMOND (Brandenburg, 1999).
Er—Si1i | 2.9899 (10) | Ni—Si1 | 2.255 (3) |
Er—Niii | 3.0178 (6) | Ni—Si2vii | 2.3110 (15) |
Er—Si2iii | 3.090 (2) | Ni—Si2iv | 2.3202 (15) |
Er—Si1iv | 3.100 (2) | Si1—Si1viii | 2.358 (3) |
Er—Erv | 3.9319 (9) | Si2—Si2ix | 2.7840 (5) |
Er—Ervi | 3.9423 (9) |
Symmetry codes: (i) −x−1/2, −y+1/2, −z; (ii) −x+1/2, −y+1/2, −z+1; (iii) x+1/2, y−1/2, z; (iv) x−1/2, y−1/2, z; (v) x, y, z−1; (vi) x−1, y, z; (vii) −x, −y+1, −z; (viii) −x, −y+1, −z+1; (ix) −x+1/2, −y+3/2, −z+1. |
Ternary intermetallics of rare earth metals with the general formula RETX2 (where RE is a rare earth metal, T is a transition metal and X is a p-block element) crystallize mostly in 23 structure types (Parthé et al., 1993–1994), viz. monoclinic NdRuSi2, CeCoC2 and LaCuS2, orthorhombic CeNiSi2, YIrGe2, LuMnGe2, ZrCrSi2, CeRhGe2, TbFeSi2, LaTmIr2Ge4, LuNiSn2, NdAgAs2, MgCuAl2, NdNiGa2, CeRhSn2 (Niepmann et al., 1999), ScRhSi2, ScFeSi2, CeNiC2, ScCoC2 and LuRuB2, and tetragonal HfCuSi2, ScCoC2 and LaRhC2.
The RETX2 phases have been the focus of special attention due to their interesting magnetic and electric properties, e.g. the Kondo effect. An accurate determination of the crystal structure for phases of this composition is a basic requirement for the better understanding of their physical properties. The existence of the phase ErNiSi2 was first reported by Bodak & Gladyshevskii (1969) who, on the basis of X-ray powder diffraction data, established that the crystal structure adopts the orthorhombic CeNiSi2 structure type. Analogous results were obtained by Gil et al. (1994). In these investigations, any information about structural data (atomic coordinates, displacement parameters) was not presented. Thus, it seemed appropriate to determine completely the crystal structure of ErNiSi2, and we present these results here.
ErNiSi2 adopts the CeNiSi2 structure type (Bodak & Gladyshevskii, 1969). A clinographic projection of the unit-cell contents is shown in Fig. 1. The coordination sphere around Er (site symmetry m2m) consists of 21 atoms, if bonding interactions are considered for distances < 4.0 Å, resulting in an [ErSi4Ni4Si6NiEr6] polyhedron (Fig. 2a). The coordination polyhedron around the Ni atom (site symmetry m2m) is a monocapped tetragonal antiprism, [NiSi5Er4], made up of 4 Er atoms in one basal plane with a capping Si atom, and 4 Si atoms in the second basal plane, if bonding interactions are considered for distances < 3.1 Å (Fig. 2b). The coordination polyhedron around atom Si1 (site symmetry m2m, bonding interactions < 3.1 Å) is a tricapped trigonal prism, [Si1NiSi2Er6], with one additional Ni and two Er atoms as capping atoms (Fig. 2c). The coordination polyhedron around atom Si2 (site symmetry m2m, bonding interactions < 3.1 Å) is a distorted cuboctahedron, [Si2Ni4Si4Er4] (Fig. 2d).
The interatomic distances (Table 1) are in good agreement with the sums of the atomic radii (Emsley, 1991). The shortest distance with the highest deviation (93% of the sum of the atomic radii) is observed between Ni and Si atoms, with an Ni—Si distance of 2.255 (3) Å.