supplementary materials


Acta Cryst. (2007). E63, o3887    [ doi:10.1107/S1600536807035362 ]

5-Methyl-2-[(E)-2-(5-methylbenz[d]oxazol-2-yl)vinyl]benz[d]oxazole

F.-F. Jian, W. Yi, L.-M. Wang and J. Wang

Abstract top

The title compound, C18H14N2O2, was prepared by recrystallization from the fluorescent brightener135. The almost perfectly planar molecule is located on a centre of inversion. The methyl H atoms are disordered equally over two positions.

Comment top

Benzoxazoles are compounds having a high fluorescence and are used as optical whitening agents, photoluminescents, and active components in dye lasers (Koyama et al., 2000). Benzoxazole derivatives show antiepileptic, antispasmodic and antifungal properties (Huseyin et al., 1998).

In the title compund, the bond lengths and angles in the two oxazole rings and two benzene rings are normal (Drew et al., 1986). C9—C9A bond distance of 1.332 (4)Å shows double bond character. The whole molecular is nearly planar. There is a π-π stacking interaction between the phenyl ring and oxazole ring at x,y + 1,z. The centroid-centroid distance between the six- and five-membered ring is 3.870Å and the perpendicular distance is 3.454 Å. In addition, there is a C—H···π interaction [C1—H1F···cg(C2,C3,C4,C5,C6,C7)i; symmetry operator (i) x,y − 1,z] with a H···cg distance of 3.516 Å.

Related literature top

For related literature, see: Drew & Lesile (1986); Huseyin et al. (1998); Koyama et al. (2000).

Experimental top

The single crystals of the title compound were obtained by recrystalling the industrial product of the fluorescent whitener DT in ethanol and DMF 1:1 (v/v) for one week at room temperature.

Refinement top

H atoms were placed in calculated positions and treated using a riding model, with C—H = 0.93–0.98 Å and with Uiso(H) = 1.2Ueq(C) or 1.5Ueq(C) for methyl H atoms. The methyl group is disordered over two equally occupied positions.

Computing details top

Data collection: CAD-4 Software (Enraf–Nonius, 1989); cell refinement: CAD-4 Software; data reduction: CAD-4 Software; program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: SHELXTL/PC (Sheldrick, 1990); software used to prepare material for publication: SHELXTL/PC.

Figures top
[Figure 1] Fig. 1. The molecular structure and atom-labeling scheme for (I), with displacement ellipsoids drawn at the 30% probability level.
5-Methyl-2-[(E)-2-(5-methylbenz[d]oxazol-2-yl)vinyl]benz[d]oxazole top
Crystal data top
C18H14N2O2Dx = 1.323 Mg m3
Mr = 290.31Melting point: 182 K
Monoclinic, C2/cMo Kα radiation
λ = 0.71073 Å
a = 22.153 (4) ÅCell parameters from 25 reflections
b = 4.7700 (10) Åθ = 1.9–27.0º
c = 14.053 (3) ŵ = 0.09 mm1
β = 100.94 (3)ºT = 293 (2) K
V = 1458.0 (5) Å3Needle, yellow
Z = 40.41 × 0.23 × 0.14 mm
F000 = 608
Data collection top
Bruker P4
diffractometer
Rint = 0.037
Radiation source: fine-focus sealed tubeθmax = 27.0º
Monochromator: graphiteθmin = 1.9º
T = 293(2) Kh = 27→26
ω scansk = 5→0
Absorption correction: nonel = 16→16
3101 measured reflections3 standard reflections
1560 independent reflections every 200 reflections
939 reflections with I > 2σ(I) intensity decay: none
Refinement top
Refinement on F2Hydrogen site location: inferred from neighbouring sites
Least-squares matrix: fullH-atom parameters constrained
R[F2 > 2σ(F2)] = 0.055  w = 1/[σ2(Fo2) + (0.0866P)2]
where P = (Fo2 + 2Fc2)/3
wR(F2) = 0.155(Δ/σ)max < 0.001
S = 1.04Δρmax = 0.24 e Å3
1560 reflectionsΔρmin = 0.27 e Å3
102 parametersExtinction correction: SHELXL97, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.0060 (17)
Secondary atom site location: difference Fourier map
Crystal data top
C18H14N2O2V = 1458.0 (5) Å3
Mr = 290.31Z = 4
Monoclinic, C2/cMo Kα
a = 22.153 (4) ŵ = 0.09 mm1
b = 4.7700 (10) ÅT = 293 (2) K
c = 14.053 (3) Å0.41 × 0.23 × 0.14 mm
β = 100.94 (3)º
Data collection top
Bruker P4
diffractometer
Rint = 0.037
Absorption correction: none3 standard reflections
3101 measured reflections every 200 reflections
1560 independent reflections intensity decay: none
939 reflections with I > 2σ(I)
Refinement top
R[F2 > 2σ(F2)] = 0.055102 parameters
wR(F2) = 0.155H-atom parameters constrained
S = 1.04Δρmax = 0.24 e Å3
1560 reflectionsΔρmin = 0.27 e Å3
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > 2sigma(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R– factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/UeqOcc. (<1)
O10.04467 (6)0.2073 (3)0.87972 (10)0.0425 (5)
N10.10077 (8)0.0570 (4)1.02211 (13)0.0403 (5)
C10.22548 (11)0.5999 (5)0.8526 (2)0.0560 (7)
H1A0.21420.70970.79470.084*0.50
H1B0.23030.72060.90820.084*0.50
H1C0.26350.50490.85150.084*0.50
H1D0.25790.58040.90820.084*0.50
H1E0.24170.56950.79470.084*0.50
H1F0.20850.78530.85140.084*0.50
C20.17573 (10)0.3866 (4)0.85785 (17)0.0416 (6)
C30.14015 (11)0.2845 (5)0.77202 (18)0.0480 (6)
H3A0.14750.35360.71340.058*
C40.09443 (11)0.0849 (5)0.77017 (17)0.0485 (6)
H4A0.07100.01850.71260.058*
C50.08615 (9)0.0078 (5)0.85917 (15)0.0375 (5)
C60.11992 (9)0.0854 (4)0.94600 (15)0.0360 (5)
C70.16546 (10)0.2896 (4)0.94564 (17)0.0413 (6)
H7A0.18820.35801.00350.050*
C80.05734 (10)0.2229 (5)0.97847 (16)0.0373 (5)
C90.02220 (9)0.4192 (4)1.02433 (16)0.0402 (6)
H9A0.03110.43361.09150.048*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
O10.0460 (9)0.0372 (9)0.0439 (9)0.0071 (7)0.0077 (6)0.0039 (7)
N10.0476 (11)0.0308 (10)0.0438 (10)0.0025 (9)0.0121 (8)0.0008 (8)
C10.0577 (15)0.0356 (13)0.0782 (19)0.0041 (12)0.0220 (13)0.0083 (12)
C20.0421 (12)0.0247 (11)0.0610 (15)0.0045 (10)0.0173 (11)0.0061 (10)
C30.0557 (14)0.0419 (14)0.0491 (14)0.0031 (12)0.0165 (11)0.0142 (11)
C40.0519 (14)0.0504 (15)0.0422 (13)0.0027 (12)0.0060 (10)0.0063 (11)
C50.0381 (11)0.0303 (12)0.0454 (12)0.0000 (10)0.0108 (9)0.0053 (10)
C60.0419 (12)0.0262 (11)0.0419 (12)0.0035 (10)0.0131 (9)0.0025 (9)
C70.0441 (12)0.0286 (12)0.0510 (14)0.0029 (10)0.0087 (10)0.0029 (10)
C80.0417 (11)0.0307 (11)0.0405 (12)0.0031 (10)0.0104 (9)0.0028 (10)
C90.0457 (13)0.0313 (12)0.0458 (13)0.0021 (10)0.0144 (10)0.0060 (9)
Geometric parameters (Å, °) top
O1—C81.365 (3)C2—C31.397 (3)
O1—C51.391 (2)C3—C41.387 (3)
N1—C81.305 (3)C3—H3A0.9300
N1—C61.399 (3)C4—C51.371 (3)
C1—C21.512 (3)C4—H4A0.9300
C1—H1A0.9600C5—C61.378 (3)
C1—H1B0.9600C6—C71.403 (3)
C1—H1C0.9600C7—H7A0.9300
C1—H1D0.9600C8—C91.445 (3)
C1—H1E0.9600C9—C9i1.332 (4)
C1—H1F0.9600C9—H9A0.9300
C2—C71.376 (3)
C8—O1—C5103.41 (16)C7—C2—C1121.1 (2)
C8—N1—C6103.80 (18)C3—C2—C1119.3 (2)
C2—C1—H1A109.5C4—C3—C2123.1 (2)
C2—C1—H1B109.5C4—C3—H3A118.5
H1A—C1—H1B109.5C2—C3—H3A118.5
C2—C1—H1C109.5C5—C4—C3115.3 (2)
H1A—C1—H1C109.5C5—C4—H4A122.3
H1B—C1—H1C109.5C3—C4—H4A122.3
C2—C1—H1D109.5C4—C5—C6124.0 (2)
H1A—C1—H1D141.1C4—C5—O1128.2 (2)
H1B—C1—H1D56.3C6—C5—O1107.82 (17)
H1C—C1—H1D56.3C5—C6—N1109.12 (18)
C2—C1—H1E109.5C5—C6—C7119.39 (19)
H1A—C1—H1E56.3N1—C6—C7131.5 (2)
H1B—C1—H1E141.1C2—C7—C6118.5 (2)
H1C—C1—H1E56.3C2—C7—H7A120.7
H1D—C1—H1E109.5C6—C7—H7A120.7
C2—C1—H1F109.5N1—C8—O1115.84 (19)
H1A—C1—H1F56.3N1—C8—C9126.5 (2)
H1B—C1—H1F56.3O1—C8—C9117.67 (19)
H1C—C1—H1F141.1C9i—C9—C8123.6 (3)
H1D—C1—H1F109.5C9i—C9—H9A118.2
H1E—C1—H1F109.5C8—C9—H9A118.2
C7—C2—C3119.6 (2)
C7—C2—C3—C40.6 (4)C8—N1—C6—C7179.4 (2)
C1—C2—C3—C4178.7 (2)C3—C2—C7—C61.2 (3)
C2—C3—C4—C50.0 (3)C1—C2—C7—C6178.1 (2)
C3—C4—C5—C60.0 (3)C5—C6—C7—C21.2 (3)
C3—C4—C5—O1179.20 (19)N1—C6—C7—C2177.7 (2)
C8—O1—C5—C4178.4 (2)C6—N1—C8—O10.2 (2)
C8—O1—C5—C60.9 (2)C6—N1—C8—C9179.5 (2)
C4—C5—C6—N1178.5 (2)C5—O1—C8—N10.7 (2)
O1—C5—C6—N10.9 (2)C5—O1—C8—C9178.99 (17)
C4—C5—C6—C70.7 (3)N1—C8—C9—C9i179.1 (3)
O1—C5—C6—C7179.99 (17)O1—C8—C9—C9i1.2 (4)
C8—N1—C6—C50.4 (2)
Symmetry codes: (i) −x, −y+1, −z+2.
Acknowledgements top

The authors thank the Natural Science Foundation of Shandong Province (grant No. Y2005B04).

references
References top

Drew, M. G. B. & Leslie, P. G. (1986). Acta Cryst. C42, 174–177.

Enraf–Nonius (1989). CAD-4 Software. Version 5.0. Enraf–Nonius, Delft, The Netherlands.

Huseyin, U., Van der Poorten, K., Cacciaguerra, S. & Spampinato, S. (1998). J. Med. Chem. 41, 1138–1145.

Koyama, E., Yang, G. & Kazuhisa, H. (2000). Tetrahedron Lett. 41, 8111–81116.

Sheldrick, G. M. (1990). SHELXTL/PC User's Manual. Siemens Analytical X-ray Instruments Inc., Madison, Wisconsin, USA.

Sheldrick, G. M. (1997). SHELXL97 and SHELXS97. University of Göttingen, Germany.