(Acetylacetonato-κ2 O,O′)(2-bromo-4-chloro-6-{[2-(dimethylamino)ethylimino]methyl}phenolato-κ3 N,N′,O)oxidovanadium(IV)

The VIV atom in the title complex, [V(C11H13BrClN2O)(C5H7O2)O], is six-coordinated by one phenolate O, one imino N and one amino N atom of the tridentate anionic Schiff base ligand, by one oxide O atom, and by two O atoms of an acetylacetonate anion, forming a distorted cis-VN2O4 octahedral coordination geometry. The deviation of the V atom from the plane defined by the three donor atoms of the Schiff base ligand and one O atom of the acetylacetone ligand towards the oxide O atom is 0.256 (2) Å.

The V IV atom in the title complex, [V(C 11 H 13 BrClN 2 O)-(C 5 H 7 O 2 )O], is six-coordinated by one phenolate O, one imino N and one amino N atom of the tridentate anionic Schiff base ligand, by one oxide O atom, and by two O atoms of an acetylacetonate anion, forming a distorted cis-VN 2 O 4 octahedral coordination geometry. The deviation of the V atom from the plane defined by the three donor atoms of the Schiff base ligand and one O atom of the acetylacetone ligand towards the oxide O atom is 0.256 (2) Å .
Green blocks of (I) were formed after slow evaporation of the solution in air for a few days.

Refinement
Hydrogen atoms were placed in geometrically idealized positions and constrained to ride on their parent atoms, with C-H distances of 0.93-0.97 Å, and with U iso (H) set at 1.2U eq (C) and 1.5U eq (C methyl ).
Figures Fig. 1. The molecular structure of the title compound, showing displacement ellipsoids drawn at the 30% probability level.
supplementary materials

Special details
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds supplementary materials sup-3 in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F 2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F 2 , conventional R-factors R are based on F, with F set to zero for negative F 2 . The threshold expression of F 2 > 2sigma(F 2 ) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F 2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.