Di-μ-oxido-bis[(2-ethoxy-6-{[2-(2-hydroxyethylamino)ethylimino]methyl}phenolato-κ3 N,N′,O 1)oxidovanadium(V)]

In the title centrosymmetric dinuclear dioxidovanadium(V) complex, [V2(C13H19N2O3)2O4], the VV ion is coordinated by an N,N′,O-tridendate 2-ethoxy-6-{[2-(2-hydroxyethylamino)ethylimino]methyl}phenolate ligand and three oxide O atoms, forming a distorted cis-VN2O4 octahedral geometry. The bridging O atoms show one short and one long bond to their two attached VV atoms. The dihedral angle between the benzene ring of the ligand and the V2O2 plane is 75.2 (3)°. The deviation of the VV ion from the plane defined by the three donor atoms of the tridentate ligand and one bridging oxide O atom is 0.337 (2) Å towards the terminal oxide O atom. Two N—H⋯O hydrogen bonds help to establish the conformation of the dimer. In the crystal, the complex molecules are linked by O—H⋯O hydrogen bonds, forming [100] chains.

The title complex is a centrosymmetric dinuclear dioxovanadium(V) compound, Fig (Table 1) are comparable with those observed in similar oxovanadium(V) complexes cited above.
In the crystal, the complex molecules are linked through intermolecular O-H···O hydrogen bonds (Table 2), to form chains along the a axis (Fig. 2).
Brown blocks were formed after slow evaporation of the solution in air for a few days.

Refinement
H2 atom was located from a difference Fourier map and refined isotropically. The N2-H2 distance is restrained to 0.90 (1) Å. The remaining hydrogen atoms were placed in geometrically idealized positions and constrained to ride on their parent atoms, with C-H distances of 0.93-0.97 Å, O-H distances of 0.82 Å, and with U iso (H) set at 1.2U eq (C) and 1.5U eq (C methyl and O).

Special details
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F 2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F 2 , conventional R-factors R are based on F, with F set to zero for negative F 2 . The threshold expression of F 2 > 2sigma(F 2 ) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F 2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.