(N,N,N′,N′-Tetramethylethylenediamine-κN)bis(2,4,6-trimethylphenolato-κO)germanium(II)

In the title compound, [Ge(C9H11O)2(C6H16N2)], the GeII atom is coordinated in a distorted trigonal–pyramidal geometry by two O atoms belonging to two 2,4,6-trimethylphenolate ligands and one N atom of a tetramethylethylenediamine ligand. Comparing the structure with published data of similar compounds shows that the Ge—O bonds are covalent and the Ge—N bond is coordinated.

In the title compound, [Ge(C 9 H 11 O) 2 (C 6 H 16 N 2 )], the Ge II atom is coordinated in a distorted trigonal-pyramidal geometry by two O atoms belonging to two 2,4,6-trimethylphenolate ligands and one N atom of a tetramethylethylenediamine ligand. Comparing the structure with published data of similar compounds shows that the Ge-O bonds are covalent and the Ge-N bond is coordinated.

Experimental
Crystal data [Ge(C 9 Table 1 Selected bond lengths (Å ). The financial support of the Ministry of Education and Science, Youth and Sport of Ukraine, is gratefully acknowledged.

Experimental
To a stirred solution of dichlorogermylene-dioxane (2.32 g, 9.98 mmol) in 30 ml of toluene was added 2,4,6-trimethylphenol (2.72 g, 19.96 mmol) in 20 ml of toluene and tetramethylethylenediamine (6.1 ml, 39.92 mmol). The mixture was stirred for 16 h at 200°C. Precipitate of the quaternary amine formed during the reaction was filtrated from this solution.
The filtered solution was evaporated to a wax material. Obtained waxy material (0.8 g) was dissolved in 5 ml of diethylether and left at -25°C. Within three days transparent crystals dropped out of the solution and were filtrated off (yield: 0.72 g, 90%). Analysis, calculated for C 24 H 38 GeN 2 O 2 : C 62.79, H 8.28, N 6.10%; found: C 62.71, H 8.24, N 6.06%.

Refinement
H atoms were positioned geometrically and refined as riding atoms, with C-H = 0.95 (CH), 0.99 (CH 2 ) and 0.98 (CH 3 ) Å and with U iso (H) = 1.2(1.5 for methyl)U eq (C).  The molecular structure of the title compound, with displacement ellipsoids drawn at the 50% probability level. Special details Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes. Refinement. Refinement of F 2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F 2 , conventional R-factors R are based on F, with F set to zero for negative F 2 . The threshold expression of F 2 > 2sigma(F 2 ) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F 2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å 2 )
x y z U iso */U eq