(Benzyl phenyl sulfoxide-κO)chloridotriphenyltin(IV)

The SnIV atom in the title compound, [Sn(C6H5)3Cl(C13H12OS)], is situated within a distorted C3ClO trigonal–bipyramidal coordination geometry with a mean Sn—C distance of 2.136 (6) Å and with an Sn—O distance of 2.393 (4) Å. The SnIV atom lies 0.171 (3) Å out of the equatorial C3 plane in the direction of the axially bound Cl atom.

The Sn IV atom in the title compound, [Sn(C 6 H 5 ) 3 Cl(C 13 H 12 -OS)], is situated within a distorted C 3 ClO trigonal-bipyramidal coordination geometry with a mean Sn-C distance of 2.136 (6) Å and with an Sn-O distance of 2.393 (4) Å . The Sn IV atom lies 0.171 (3) Å out of the equatorial C 3 plane in the direction of the axially bound Cl atom.
The coordination environment of the tin IV atom in (I) can be described as a distorted trigonal bipyramid with three phenyl groups occupying the equatorial positions whereas the axial positions are occupied by the Cl1 atom and the sulfoxide O1 atom (Fig. 1).The Sn atom is slightly displaced from the equatorial plane defined by the C 3 set by 0.171 (3) Å in the direction of the Cl1 atom. The Sn-C and Sn-Cl bond lengths are similar to these found in chloro(dimethylsulfoxide-κO)triphenyltin (Kumar et al., 2009). However, the Sn-O length (2.393 (4) Å) is longer than that in the above mentioned structure (2.310 (2) Å). The S═O bond length (1.524 (4) Å) is longer than that in the free ligand (1.500 (2) Å) (Fuller et al., 2009) due to the O1 atom coordination to Sn atom. The dihedral angle between two phenyl rings in the sulfoxide ligand is 54.56 (5)°.

Experimental
Benzylphenylsulfoxide (0.43 g, 2 mmol) and triphenyltin chloride (0.77 g, 2 mmol) in ethanol (40 ml) were refluxed for 1 h, and then the colourless solution was reduced to 15 ml under reduce pressure. The colourless crystals suitable for X-ray analysis were obtained by slow evaporation of the solution at room temperature (yield: 62%; M.pt.: 385-386 K).

Refinement
H atoms were placed at calculated positions (C-H = 0.97 Å for methylene-H and C-H = 0.93 Å for aromatic-H atoms) and refined as riding with U iso (H) = 1.2U eq (C).

Special details
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes. Refinement. Refinement of F 2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F 2 , conventional R-factors R are based on F, with F set to zero for negative F 2 . The threshold expression of F 2 > σ(F 2 ) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F 2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.