Bis[1,3-bis(diphenylphosphanyl)propane]copper(I) tetrachloridogallate(III)

In the title compound, [Cu(C27H26P2)2][GaCl4], the CuI atom in the complex cation is P,P′-chelated by two 1,3-bis(diphenylphosphanyl)propane ligands in a distorted tetrahedral geometry, while the GaIII cation is coordinated by four chloride anions in a distorted tetrahedral geometry. In the crystal, weak C—H⋯π interactions occur between adjacent complex cations.

In the title compound, [Cu(C 27 H 26 P 2 ) 2 ][GaCl 4 ], the Cu I atom in the complex cation is P,P 0 -chelated by two 1,3-bis(diphenylphosphanyl)propane ligands in a distorted tetrahedral geometry, while the Ga III cation is coordinated by four chloride anions in a distorted tetrahedral geometry. In the crystal, weak C-HÁ Á Á interactions occur between adjacent complex cations.  Table 1 Hydrogen-bond geometry (Å , ).
The title compound crystallizes in the monoclinic space group P2 1 /c. The molecular structure consists of the cationic [Cu(dppp) 2 ] + unit and the anionic [GaCl 4 ]unit (Fig.1). The central copper(I) atom is coordinated by four phosphorus atoms from two dppp ligands. The strain of six-membered chelating ring is observed from the two low P-Cu-P bond angles of P1-Cu1-P2 = 99.18 (4)° and P3-Cu1-P4 = 98.34 (4)°, compared to the normal bond angle of 109°. The CuP 2 C 3 skeleton is not planar because of the distorted tetrahedrally coordinated copper atom with the average Cu-P bond length of 2.3168 (11) Å, which is similar to that found in [Cu(dppp) (Comba et al., 1999). In the tetrahedral [GaCl 4 ]anion, the average Ga-Cl bond length is 2.152 (2) Å and the average Cl

Experimental
To a suspension of CuCl (75 mg, 0.75 mmol) in CH 3 CN (10 mL) was added with the dppp (618 mg, 1.5 mmol) solution in CH 2 Cl 2 (10 mL) and GaCl 3 (88 mg, 0.75 mmol). After the mixture was stirred for 6 h at room temperature, the colorless solution with a little white precipitate was obtained. After filtration, colorless block crystals were formed by the slow evaporation of the filtrate at room temperature in two days. Analysis, calculated C 54 H 52 Cl 4 P 4 GaCu: C 58.96, H 4.76%; found C 58.43, H 4.69%.

Refinement
H atoms were positioned and refined as riding atoms with C-H = 0.93-0.97 Å and U iso (H) = 1.2U eq (C).

Figure 1
Perspective view of the title compound with displacement ellipsoids at the 50% probability level.

Bis[1,3-bis(diphenylphosphanyl)propane]copper(I) tetrachloridogallate(III)
Crystal data where P = (F o 2 + 2F c 2 )/3 (Δ/σ) max = 0.001 Δρ max = 0.85 e Å −3 Δρ min = −0.76 e Å −3 Special details Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes. Refinement. Refinement of F 2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F 2 , conventional R-factors R are based on F, with F set to zero for negative F 2 . The threshold expression of F 2 > 2sigma(F 2 ) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F 2 are statistically about twice as large as those based on F, and R-factors based on ALL data will be even larger.