http://journals.iucr.org/j/journalhomepage.html Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published. en-gb Copyright (c) 2013 International Union of Crystallography International Union of Crystallography International Union of Crystallography http://journals.iucr.org urn:issn:0021-8898 Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published. text/html Journal of Applied Crystallography text daily 1 2002-02-01T00:00+00:00 med@iucr.org Journal of Applied Crystallography Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 http://journals.iucr.org/logos/rss10j.gif http://journals.iucr.org/j/journalhomepage.html Still image http://journals.iucr.org/j/services/forthcoming.html#pf0113 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Peter Paufler doi: International Union of Crystallography en BOOK REVIEW text/html Graphene - Carbon in two dimensions. By Mikhail I. Katsnelson. Cambridge University Press, 2012. Price (hardcover) GBP 45.00. ISBN-13: 9780521195409. text http://journals.iucr.org/j/services/forthcoming.html#kk5132 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 J. C. Bendert et al. doi: International Union of Crystallography en ; ; ; text/html Pair Distribution Function Analysis of X-ray Diffraction from Amorphous Spheres in an Asymmetric Transmission Geometry: Application to a Zr58.5Cu15.6Ni12.8Al10.3Nb2.8 Glass text http://journals.iucr.org/j/services/forthcoming.html#he5606 Structural investigations under temperature variation were carried out on SrLaMRuO6 (M = Zn,Mg) double perovskites using diffraction techniques and a symmetry-mode analysis approach. The temperature vs. tolerance factor phase diagram was completed for SrLnMRuO6. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 E. Iturbe-Zabalo et al. doi: International Union of Crystallography Structural investigations under temperature variation were carried out on SrLaMRuO6 (M = Zn,Mg) double perovskites using diffraction techniques and a symmetry-mode analysis approach. The temperature vs. tolerance factor phase diagram was completed for SrLnMRuO6. en LATEX; CLASS FILE; DOCUMENTATION Structural investigations under temperature variation were carried out on SrLaMRuO6 (M = Zn,Mg) double perovskites using diffraction techniques and a symmetry-mode analysis approach. The temperature vs. tolerance factor phase diagram was completed for SrLnMRuO6. text/html Symmetry mode analysis of the phase transitions in SrLaZnRuO6 and SrLaMgRuO6 ordered double perovskites text http://journals.iucr.org/j/services/forthcoming.html#to5038 Dynamical diffraction theory was used to simulate RHEED intensity variations during the perfect layer-by-layer growth of germanium. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Zbigniew Mitura doi: International Union of Crystallography Dynamical diffraction theory was used to simulate RHEED intensity variations during the perfect layer-by-layer growth of germanium. en ; ; ; Dynamical diffraction theory was used to simulate RHEED intensity variations during the perfect layer-by-layer growth of germanium. text/html Computer studies on RHEED from the growing surface of Ge(001) text http://journals.iucr.org/j/services/forthcoming.html#kk5138 The crystal structure of a novel open-framework gallogermanate, SU-66, has been solved from laboratory X-ray powder diffraction data in a direct-space structure-solution algorithm by using local structural information obtained from infrared spectroscopy. The method appears to be generally applicable to other open-framework germanates. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 A. Ken Inge et al. doi: International Union of Crystallography The crystal structure of a novel open-framework gallogermanate, SU-66, has been solved from laboratory X-ray powder diffraction data in a direct-space structure-solution algorithm by using local structural information obtained from infrared spectroscopy. The method appears to be generally applicable to other open-framework germanates. en COMPOSITE BUILDING UNITS; INFRARED SPECTROSCOPY; PARALLEL TEMPERING; DIRECT-SPACE METHODS; STRUCTURE DETERMINATION; ZEOLITES; OPEN-FRAMEWORK GERMANATES The crystal structure of a novel open-framework gallogermanate, SU-66, has been solved from laboratory X-ray powder diffraction data in a direct-space structure-solution algorithm by using local structural information obtained from infrared spectroscopy. The method appears to be generally applicable to other open-framework germanates. text/html Solving complex open-framework structures from X-ray powder diffraction by direct-space methods using composite building units text http://journals.iucr.org/j/services/forthcoming.html#kk5141 EXPO2013, the last version of the EXPO suite, has been enriched with new phasing approaches and with novel computing and graphic tools. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Angela Altomare et al. doi: International Union of Crystallography EXPO2013, the last version of the EXPO suite, has been enriched with new phasing approaches and with novel computing and graphic tools. en ; ; ; EXPO2013, the last version of the EXPO suite, has been enriched with new phasing approaches and with novel computing and graphic tools. text/html EXPO2013: a kit of tools for phasing crystal structures from powder data text http://journals.iucr.org/j/services/forthcoming.html#xz5012 The nonlinear continuum equation of thin-film growth is applicable to simulate the surface of multilayer gratings with large boundary profile heights and/or gradient jumps. The integrated approach to the calculation of boundary profiles and the intensity of short-wave scattering by multilayer gratings is a way to performing studies comparable in accuracy to measurements with synchrotron radiation for known materials and growth technique. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Goray and Lubov doi:10.1107/S0021889813012387 International Union of Crystallography The nonlinear continuum equation of thin-film growth is applicable to simulate the surface of multilayer gratings with large boundary profile heights and/or gradient jumps. The integrated approach to the calculation of boundary profiles and the intensity of short-wave scattering by multilayer gratings is a way to performing studies comparable in accuracy to measurements with synchrotron radiation for known materials and growth technique. en CONTINUUM GROWTH MODEL; BOUNDARY PROFILES; BOUNDARY INTEGRAL EQUATION METHOD; SCATTERING INTENSITY; DIFFRACTION GRATING EFFICIENCY; MULTILAYER RELIEF GRATINGS; SOFT-X-RAY AND EXTREME ULTRAVIOLET RANGE The nonlinear continuum equation of thin-film growth is applicable to simulate the surface of multilayer gratings with large boundary profile heights and/or gradient jumps. The integrated approach to the calculation of boundary profiles and the intensity of short-wave scattering by multilayer gratings is a way to performing studies comparable in accuracy to measurements with synchrotron radiation for known materials and growth technique. text/html Nonlinear continuum growth model of multiscale reliefs as applied to rigorous analysis of multilayer short-wave scattering intensity. Part I: Gratings text http://journals.iucr.org/j/services/forthcoming.html#xz5010 Three-wave diffraction has been experimentally studied for a set of III–nitride and ZnO epitaxial films differing in thickness and structural perfection. Properties of the multiple diffraction pattern in highly distorted layers are analyzed. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Kyutt and Scheglov doi:10.1107/S0021889813011709 International Union of Crystallography Three-wave diffraction has been experimentally studied for a set of III–nitride and ZnO epitaxial films differing in thickness and structural perfection. Properties of the multiple diffraction pattern in highly distorted layers are analyzed. en X-RAY DIFFRACTION; MULTIPLE DIFFRACTION; EPITAXIAL LAYERS; STRUCTURAL DEFECTS; WURTZITE STRUCTURE Three-wave diffraction has been experimentally studied for a set of III–nitride and ZnO epitaxial films differing in thickness and structural perfection. Properties of the multiple diffraction pattern in highly distorted layers are analyzed. text/html Three-wave X-ray diffraction in distorted epitaxial structures text http://journals.iucr.org/j/services/forthcoming.html#rw5031 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 K. Moovendaran et al. doi: International Union of Crystallography en ; ; ; text/html Unidirectional growth and characterization of L-Tartaric acid single crystals text http://journals.iucr.org/j/services/forthcoming.html#rr5041 A software package for the three-dimensional modelling of dose distributions in macromolecular crystals during X-ray diffraction experiments is described. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Oliver B. Zeldin et al. doi: International Union of Crystallography A software package for the three-dimensional modelling of dose distributions in macromolecular crystals during X-ray diffraction experiments is described. en RADIATION DAMAGE; X-RAY DIFFRACTION; DOSE MAPS; DATA COLLECTION SIMULATIONS; RADDOSE; ABSORPTION CORRECTION A software package for the three-dimensional modelling of dose distributions in macromolecular crystals during X-ray diffraction experiments is described. text/html RADDOSE-three-dimensional: time and space resolved modelling of dose in macromolecular crystallography text http://journals.iucr.org/j/services/forthcoming.html#ks5324 A stack of Si curved crystals has been characterized under hard X-ray diffraction. The stack behaves as it were a single-crystal as a result of diffraction by curved diffracting planes. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Ilaria Neri et al. doi: International Union of Crystallography A stack of Si curved crystals has been characterized under hard X-ray diffraction. The stack behaves as it were a single-crystal as a result of diffraction by curved diffracting planes. en CURVED CRYSTALS; STACK; X-RAY DIFFRACTION; X-RAY FOCUSING; LAUE LENS A stack of Si curved crystals has been characterized under hard X-ray diffraction. The stack behaves as it were a single-crystal as a result of diffraction by curved diffracting planes. text/html Ordered stacking of crystals with adjustable curvatures for hard X- and γ-ray broadband focusing text http://journals.iucr.org/j/services/forthcoming.html#xz5011 A modified version of the statistical dynamical diffraction theory has been applied to a set of model SiGe/Si thin film samples in order to define the capabilities of this approach for returning structural information from defective semiconductor heterostructures. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 P. K. Shreeman et al. doi:10.1107/S0021889813011308 International Union of Crystallography A modified version of the statistical dynamical diffraction theory has been applied to a set of model SiGe/Si thin film samples in order to define the capabilities of this approach for returning structural information from defective semiconductor heterostructures. en STATISTICAL DYNAMICAL DIFFRACTION THEORY; DEFECTIVE SEMICONDUCTOR HETEROSTRUCTURES A modified version of the statistical dynamical diffraction theory has been applied to a set of model SiGe/Si thin film samples in order to define the capabilities of this approach for returning structural information from defective semiconductor heterostructures. text/html Modified statistical dynamical diffraction theory: analysis of model SiGe heterostructures text http://journals.iucr.org/j/services/forthcoming.html#ks5351 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Xiaoke Mu et al. doi: International Union of Crystallography en PAIR-DISTRIBUTION FUNCTION; ELECTRON DIFFRACTION; MOLECULAR-DYNAMICS SIMULATION; DISORDERED SOLIDS; PHASE TRANSFORMATION text/html Evolution of order in amorphous-to-crystalline phase transformation of MgF2 text http://journals.iucr.org/j/services/forthcoming.html#rw5030 Two conceptually different methods to representatively reduce large experimentally measured orientation data sets are derived and discussed. Examples are given which show that, with approximately 3% of the experimental data, the crystallite orientation distribution can be very well reproduced. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Katja Jöchen et al. doi:10.1107/S0021889813010972 International Union of Crystallography Two conceptually different methods to representatively reduce large experimentally measured orientation data sets are derived and discussed. Examples are given which show that, with approximately 3% of the experimental data, the crystallite orientation distribution can be very well reproduced. en PLEASE PROVIDE KEYWORDS; ; ; Two conceptually different methods to representatively reduce large experimentally measured orientation data sets are derived and discussed. Examples are given which show that, with approximately 3% of the experimental data, the crystallite orientation distribution can be very well reproduced. text/html Representative reduction of crystallographic orientation data text http://journals.iucr.org/j/services/forthcoming.html#he5603 A two-stage solution has been implemented on top-loading cryo-furnaces to alleviate the safety implications involving icing up of the sample space. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 S. Pangelis et al. doi:10.1107/S0021889813010868 International Union of Crystallography A two-stage solution has been implemented on top-loading cryo-furnaces to alleviate the safety implications involving icing up of the sample space. en CRYOSTATS; ICING UP; ICE BLOCKAGE; SAMPLE STICKS; TOP LOADING; CLOSED CYCLE REFRIGERATORS; CRYOGEN FREE; CRYO-FURNACES; CRYO-COOLERS; SAFETY INTERLOCKS; NEUTRON SCATTERING; SAMPLE ENVIRONMENT A two-stage solution has been implemented on top-loading cryo-furnaces to alleviate the safety implications involving icing up of the sample space. text/html Safety interlock and vent system to alleviate potentially dangerous ice blockage of top-loading cryostat sample sticks text http://journals.iucr.org/j/services/forthcoming.html#he5593 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Caizhen Zhu et al. doi:10.1107/S0021889813010820 International Union of Crystallography en TWO-DIMENSIONAL SMALL-ANGLE X-RAY SCATTERING; ARAMID FIBERS; FULL PATTERN FITTING text/html Relationship between performance and microvoids of aramid fibers revealed by two-dimensional small-angle X-ray scattering text http://journals.iucr.org/j/services/forthcoming.html#he5574 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 L. H. Thomas et al. doi:10.1107/S002188981301056X International Union of Crystallography en CELLULOSE FIBRES; LATERAL DISORDER; POLYMERS text/html Identifying multiple forms of lateral disorder in cellulose fibres text http://journals.iucr.org/j/services/forthcoming.html#xz5002 Characterization of thin SiGe/Si(100) epilayer using reciprocal space maps measured by laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Tatjana Ulyanenkova et al. doi:10.1107/S0021889813010492 International Union of Crystallography Characterization of thin SiGe/Si(100) epilayer using reciprocal space maps measured by laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films. en THIN FILMS; PLEASE PROVIDE; PLEASE PROVIDE; PLEASE PROVIDE Characterization of thin SiGe/Si(100) epilayer using reciprocal space maps measured by laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films. text/html Characterization of SiGe thin films by laboratory X-ray instrument text http://journals.iucr.org/j/services/forthcoming.html#xz5006 Investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs NWs grown on GaAs[111]B substrate. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Anton Davydok et al. doi:10.1107/S0021889813010522 International Union of Crystallography Investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs NWs grown on GaAs[111]B substrate. en SEMICONDUCTOR NANOWIRES; MOLECULAR BEAM EPITAXY (MBE) GROWTH; X-RAY DIFFRACTION Investigation of the influence of Si supply on the molecular beam epitaxy growth process and morphology of InAs NWs grown on GaAs[111]B substrate. text/html Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowire on GaAs[111]B text http://journals.iucr.org/j/services/forthcoming.html#xz5007 A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) allowed the influence of structural transformations in the damaged layer of Si(001) substrate, heavily doped by Zn ions on a Zn depth redistribution, after a multistage thermal treatments to be revealed. The shape of Zn SIMS profiles correlates to the crystal structure of the layer and depends on the presence of factors influencing the mobility of Zn atoms. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Kirill Shcherbachev et al. doi:10.1107/S0021889813010169 International Union of Crystallography A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) allowed the influence of structural transformations in the damaged layer of Si(001) substrate, heavily doped by Zn ions on a Zn depth redistribution, after a multistage thermal treatments to be revealed. The shape of Zn SIMS profiles correlates to the crystal structure of the layer and depends on the presence of factors influencing the mobility of Zn atoms. en X-RAY DIFFRACTION; ION IMPLANTATION; RADIATION-INDUCED DEFECTS; SILICON A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) allowed the influence of structural transformations in the damaged layer of Si(001) substrate, heavily doped by Zn ions on a Zn depth redistribution, after a multistage thermal treatments to be revealed. The shape of Zn SIMS profiles correlates to the crystal structure of the layer and depends on the presence of factors influencing the mobility of Zn atoms. text/html Defect structure transformation after thermal annealing in a surface layer of Zn implanted Si(001) substrates text http://journals.iucr.org/j/services/forthcoming.html#xk5010 Three-dimensional reciprocal space mapping by X-ray and electron diffraction was used to explore the internal structure and shape of differently oriented epitaxial Co/CaF2 facetted nanoparticles. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 S. M. Suturin et al. doi:10.1107/S0021889813008777 International Union of Crystallography Three-dimensional reciprocal space mapping by X-ray and electron diffraction was used to explore the internal structure and shape of differently oriented epitaxial Co/CaF2 facetted nanoparticles. en COBALT-ON-FLUORITE NANOPARTICLES; GIXD; RHEED; GISAXS; EPITAXIAL GROWTH; THREE-DIMENSIONAL RECIPROCAL SPACE MAPPING Three-dimensional reciprocal space mapping by X-ray and electron diffraction was used to explore the internal structure and shape of differently oriented epitaxial Co/CaF2 facetted nanoparticles. text/html A look inside epitaxial cobalt-on-fluorite nanoparticles with three-dimensional reciprocal space mapping using GIXD, RHEED and GISAXS text http://journals.iucr.org/j/services/forthcoming.html#xk5001 A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy is presented. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 A. Zhylik et al. doi:10.1107/S0021889813006171 International Union of Crystallography A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy is presented. en EPITAXIAL LAYERS; RELAXATION PARAMETERS; HIGH-RESOLUTION X-RAY DIFFRACTION; THEORETICAL APPROACH A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy is presented. text/html Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures text http://journals.iucr.org/j/services/forthcoming.html#xk5006 Several ways of tuning a higher asymmetry factor (>10) in V-channel X-ray monochromators, for metrological and imaging applications, were analysed with more than a sixfold intensity increase for compositionally and thermally tuned cases. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 D. Korytár et al. doi:10.1107/S0021889813006122 International Union of Crystallography Several ways of tuning a higher asymmetry factor (>10) in V-channel X-ray monochromators, for metrological and imaging applications, were analysed with more than a sixfold intensity increase for compositionally and thermally tuned cases. en METROLOGY; MONTEL OPTICS; BRAGG MAGNIFIER; CHANNEL-CUT CRYSTAL; 61.05.CP; 41.50.+HS Several ways of tuning a higher asymmetry factor (>10) in V-channel X-ray monochromators, for metrological and imaging applications, were analysed with more than a sixfold intensity increase for compositionally and thermally tuned cases. text/html Potential use of V-channel Ge(220) monochromators in X-ray metrology and imaging text http://journals.iucr.org/j/services/forthcoming.html#xk5002 Processing of phase contrast images in laboratory conditions. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Zdenko Zápražný et al. doi:10.1107/S002188981300558X International Union of Crystallography Processing of phase contrast images in laboratory conditions. en PHASE CONTRAST IMAGING; X-RAY IMAGING; X-RAY RADIOGRAPHY; DIGITAL RADIOGRAPHY; COMPUTERIZED TOMOGRAPHY; COMPUTED RADIOGRAPHY Processing of phase contrast images in laboratory conditions. text/html Processing of projections containing phase contrast in laboratory µ-computerized tomography imaging text http://journals.iucr.org/j/services/forthcoming.html#xk5008 Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Goran Lovric et al. doi:10.1107/S0021889813005591 International Union of Crystallography en DOSE OPTIMIZATION; RADIATION DOSE; X-RAY MICROTOMOGRAPHY; LUNG AVEOLI text/html Dose optimization approach to fast X-ray microtomography of the lung alveoli text http://journals.iucr.org/j/services/forthcoming.html#xk5003 High quality quartz (α-SiO2) crystals are characterized and their use for inelastic X-ray scattering analyzers are presented and discussed. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Marcelo Goncalves Honnicke et al. doi:10.1107/S0021889813004731 International Union of Crystallography High quality quartz (α-SiO2) crystals are characterized and their use for inelastic X-ray scattering analyzers are presented and discussed. en X-RAY OPTICS; QUARTZ SINGLE CRYSTALS; SPHERICAL ANALYZER; INELASTIC X-RAY SCATTERING ANALYZERS High quality quartz (α-SiO2) crystals are characterized and their use for inelastic X-ray scattering analyzers are presented and discussed. text/html High quality quartz single crystals for high-energy-resolution inelastic X-ray scattering analyzers text http://journals.iucr.org/j/services/forthcoming.html#xk5004 Dip coating is a facile technique to control structure and electrical performance. Both structural anisotropy and transport properties are enhanced upon thermal treatment. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Kamran Ali et al. doi:10.1107/S0021889813004718 International Union of Crystallography Dip coating is a facile technique to control structure and electrical performance. Both structural anisotropy and transport properties are enhanced upon thermal treatment. en STRUCTURAL ANISOTROPY; ELECTRICAL ANISOTROPY; GRAZING-INCIDENCE X-RAY DIFFRACTION Dip coating is a facile technique to control structure and electrical performance. Both structural anisotropy and transport properties are enhanced upon thermal treatment. text/html Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique text http://journals.iucr.org/j/services/forthcoming.html#xk5009 A three-dimensional Bragg-diffraction imaging technique, which combines rocking curve imaging with `pinhole' and `section' diffraction topography in the transmission case, allows three-dimensional lattice distortion in the bulk of an ice crystal under compression to be measured. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Armelle Philip et al. doi:10.1107/S002188981300472X International Union of Crystallography A three-dimensional Bragg-diffraction imaging technique, which combines rocking curve imaging with `pinhole' and `section' diffraction topography in the transmission case, allows three-dimensional lattice distortion in the bulk of an ice crystal under compression to be measured. en ROCKING CURVE IMAGING (RCI); 3D-RCI; ICE CRYSTAL; CRYSTAL DISTORTION; DEFECT IN CRYSTAL A three-dimensional Bragg-diffraction imaging technique, which combines rocking curve imaging with `pinhole' and `section' diffraction topography in the transmission case, allows three-dimensional lattice distortion in the bulk of an ice crystal under compression to be measured. text/html Three-dimensional rocking curve imaging to measure the effective distortion in the neighbourhood of a defect within a crystal: an ice example text http://journals.iucr.org/j/services/forthcoming.html#xz5008 The crystalline structure of single free-standing GaAs nanowires, grown by molecular beam epitaxy on a GaAs substrate at specific positions defined by focused ion beams, and the substrate regions close to the Au-implanted regions are investigated through grazing-incidence X-ray diffraction. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Genziana Bussone et al. doi:10.1107/S0021889813004226 International Union of Crystallography The crystalline structure of single free-standing GaAs nanowires, grown by molecular beam epitaxy on a GaAs substrate at specific positions defined by focused ion beams, and the substrate regions close to the Au-implanted regions are investigated through grazing-incidence X-ray diffraction. en SEMICONDUCTOR NANOWIRES; GROWTH; GRAZING-INCIDENCE X-RAY DIFFRACTION; GAAS The crystalline structure of single free-standing GaAs nanowires, grown by molecular beam epitaxy on a GaAs substrate at specific positions defined by focused ion beams, and the substrate regions close to the Au-implanted regions are investigated through grazing-incidence X-ray diffraction. text/html Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams text http://journals.iucr.org/j/services/forthcoming.html#xz5004 The microcrack propagation and cleavage behaviour in silicon wafers during thermal annealing has been studied by in situ X-ray diffraction imaging (topography). Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Andreas Danilewsky et al. doi:10.1107/S0021889813003695 International Union of Crystallography The microcrack propagation and cleavage behaviour in silicon wafers during thermal annealing has been studied by in situ X-ray diffraction imaging (topography). en MICROCRACKS; SILICON WAFER FRACTURE; IN SITU OBSERVATIONS; X-RAY DIFFRACTION IMAGING The microcrack propagation and cleavage behaviour in silicon wafers during thermal annealing has been studied by in situ X-ray diffraction imaging (topography). text/html Crack propagation and fracture in silicon wafers under thermal stress text http://journals.iucr.org/j/services/forthcoming.html#xz5005 The results of a real-time X-ray crystallographic study of the melting transition of polystyrene colloidal crystals during heating are presented. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 A. V. Zozulya et al. doi:10.1107/S0021889813003725 International Union of Crystallography The results of a real-time X-ray crystallographic study of the melting transition of polystyrene colloidal crystals during heating are presented. en COLLOIDAL CRYSTALS; SMALL-ANGLE X-RAY SCATTERING; THERMAL TREATMENT The results of a real-time X-ray crystallographic study of the melting transition of polystyrene colloidal crystals during heating are presented. text/html In situ X-ray crystallographic study of the structural evolution of colloidal crystals upon heating text http://journals.iucr.org/j/services/forthcoming.html#xz5001 Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfection, especially under the use of a thin SiGe buffer layer. Copyright (c) 2013 International Union of Crystallography urn:issn:0021-8898 Peter Zaumseil et al. doi:10.1107/S0021889813003518 International Union of Crystallography Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfection, especially under the use of a thin SiGe buffer layer. en NANOSTRUCTURED SI; GE HETEROEPITAXY; SILICON-ON-INSULATOR (SOI) SUBSTRATES; GRAZING-INCIDENCE X-RAY DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY (TEM) Selective epitaxial growth of Ge on nanostructured Si islands on silicon-on-insulator substrates is investigated by X-ray diffraction and transmission electron microscopy to prove the compliance effect between the materials and the structural perfection, especially under the use of a thin SiGe buffer layer. text/html X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates text