Journal of Applied Crystallography
Volume 9, Part 4 (August 1976)
J. Appl. Cryst. (1976). 9, 263-268 [doi:10.1107/S0021889876011333]
Mise en évidence par diffraction électronique de la mise en ordre des atomes de nickel en excès par rapport à la stoechiométrie dans les alliages
'-NiAl riches en nickel: formation d'une surstructure Ni2Al
F. Reynaud
J. Appl. Cryst. (1976). 9, 269-272 [doi:10.1107/S0021889876011345]
Characteristics of a channel plate as an image intensifier for X-ray topography
M. Ando, S. Hosoya and K. Namikawa
J. Appl. Cryst. (1976). 9, 273-278 [doi:10.1107/S0021889876011357]
Wavelength-dependent reflectivities of a few neutron monochromators
S. S. Malik
J. Appl. Cryst. (1976). 9, 279-285 [doi:10.1107/S0021889876011369]
Etude des fautes d'empilement dans les kaolinites partiellement désordonnées. II. Modèles d'empilement comportant des fautes par rotation
A. Plançon et C. Tchoubar
J. Appl. Cryst. (1976). 9, 286-290 [doi:10.1107/S0021889876011370]
The detection of small differences in lattice constant at low temperature by an energy-dispersive X-ray diffractometer
T. Nakajima, T. Fukamachi, O. Terasaki and S. Hosoya
J. Appl. Cryst. (1976). 9, 291-295 [doi:10.1107/S0021889876011382]
Indexing crystal faces on SEM photographs
C. S. Strom
J. Appl. Cryst. (1976). 9, 296-309 [doi:10.1107/S0021889876011394]
The neutron small-angle camera D11 at the high-flux reactor, Grenoble
K. Ibel
J. Appl. Cryst. (1976). 9, 310-317 [doi:10.1107/S0021889876011400]
The influence of elastic anisotropy on the X-ray topographic image width of pure screw dislocations
H. Klapper
J. Appl. Cryst. (1976). 9, 318-324 [doi:10.1107/S0021889876011412]
Etude du polytypisme des cristaux de carbure de silicium par diffraction électronique par réflexion
P. Michel, J. P. Gauthier et R. Riwan
J. Appl. Cryst. (1976). 9, 325-334 [doi:10.1107/S0021889876011424]
The investigation of multi-reflection images from small crystallites using dark-field electron microscopy
W. Krakow and B. M. Siegel
J. Appl. Cryst. (1976). 9, 335-338 [doi:10.1107/S0021889876011436]
Phase transition studies of pure and flux-grown barium titanate crystals
R. Clarke
J. Appl. Cryst. (1976). 9, 339-341 [doi:10.1107/S0021889876011448]
A rapid procedure for aligning crystals on the precession camera
D. R. Stirling and F. J. de Wet
J. Appl. Cryst. (1976). 9, 342-346 [doi:10.1107/S002188987601145X]
Lattice-parameter measurement technique for single crystals using two lattice planes, and its application to Gd3Ga5O12 single crystals
S. Isomae, S. Kishino, K. Takagi, M. Ishii and M. Maki
J. Appl. Cryst. (1976). 9, 347-351 [doi:10.1107/S0021889876011461]
Méthode d'indexation rapide des diagrammes de diffraction électronique en réflexion de la face (00.1) de cristaux hexagonaux
J. Bessières, J. J. Heizmann et R. Baro
J. Appl. Cryst. (1976). 9, 352 [doi:10.1107/S0021889876011473]
An erratum: effective particle size as determined by the initial slope of the Fourier-coefficient-against-order curve for X-ray diffraction line profiles
G. B. Mitra and B. K. Mathur
J. Appl. Cryst. (1976). 9, 353-354 [doi:10.1107/S0021889876011485]
Epaisseur moyenne de domaines ordonnés de LiFe5O8 dans diverses directions
M. Bessière, F. Bley, Y. Calvayrac, S. Lefebvre et M. Fayard
J. Appl. Cryst. (1976). 9, 355-356 [doi:10.1107/S0021889876011497]
Problems in the simulation of dark-field images in X-ray topography and electron microscopy
Y. Epelboin
J. Appl. Cryst. (1976). 9, 356-357 [doi:10.1107/S0021889876011503]
Transmission absorption-edge technique for absolute polarity determination
S. C. Abrahams and J. L. Bernstein
J. Appl. Cryst. (1976). 9, 357-359 [doi:10.1107/S0021889876011515]
Crystal data for two new lanthanide acid iodates: Pr(IO3)3.HIO3 and 3La(IO3)3.JIO3.7H2O
S. C. Abrahams, J. L. Bernstein, J. W. Shiever and K. Nassau
J. Appl. Cryst. (1976). 9, 360 [doi:10.1107/S0021889876011527]
Crystal data for tris (trimethylammonium) heptabromodicadmate
A. Daoud and J. C. Mutin
J. Appl. Cryst. (1976). 9, 361-364 [doi:10.1107/S0021889876011539]
Crystal data for some o-molecular compounds
F. H. Herbstein, M. Kaftory and H. Regev
J. Appl. Cryst. (1976). 9, 364-366 [doi:10.1107/S0021889876011540]
Constantes cristallographiques de CuSe2O5, CuSeO3 et Cu2SeO4
G. Meunier et M. Bertaud
J. Appl. Cryst. (1976). 9, 366-367 [doi:10.1107/S0021889876011552]
Crystal data for a tetrahydrated compound of 1,2-ethanedisuplhonic acid with CuII: Cu[SO3(CH2)2SO3].4H2O
F. Charbonnier, J. Faure and H. Loiseleur
J. Appl. Cryst. (1976). 9, 368-369 [doi:10.1107/S0021889876011564]
Données cristallographiques sur deux phosphates de scandium: Sc(PO3)3 et Sc4(P4O12)3
M. Bagieu-Beucher
J. Appl. Cryst. (1976). 9, 369-370 [doi:10.1107/S0021889876011576]
Alimentation autonome en azote liquide: application à un dispositif basse température Stoe
S. Lecocq et A. Thozet
J. Appl. Cryst. (1976). 9, 370 [doi:10.1107/S0021889876011588]
Observation of lead L
radiation from commercial X-ray tubes
G. J. McIntyre and Z. Barnea
J. Appl. Cryst. (1976). 9, 370-371 [doi:10.1107/S002188987601159X]
Crystallographers
J. Appl. Cryst. (1976). 9, 371 [doi:10.1107/S0021889876011606]
Report of the Tenth General Assembly and International Congress of Crystallography
J. Appl. Cryst. (1976). 9, 371 [doi:10.1107/S0021889876012272]
World Directory of Crystallographers. Fifth Edition
J. Appl. Cryst. (1976). 9, 371 [doi:10.1107/S0021889876011618]
Real solids and radiation by A. E. Hughes and D. Pooley
J. Appl. Cryst. (1976). 9, 371-372 [doi:10.1107/S002188987601162X]
Fraktionierung der Spurenelemente bei der Kristallisation by H. E. Usdowski
J. Appl. Cryst. (1976). 9, 372 [doi:10.1107/S0021889876011631]
Surface physics by M. Prutton
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