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Figure 3
GISAXS of two 100 nm thick samples deposited under high, (a) and (b), and low, (c) and (d), discharge power, at the critical angle, (a) and (c), and 0.5° above it, (b) and (d); on both samples a top amorphous layer with 10 nm thickness was deposited.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| February 2007| Pages s373-s376
doi:10.1107/S0021889807002075
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