Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Lazarev, S.; Barchuk, M.; Bauer, S.; Forghani, K.; Holý, V.; Scholz, F.; Baumbach, T.

doi:10.1107/S0021889812043051

Figure 6
(a) The variation of D_s determined from coplanar high-resolution X-ray diffraction and D_e determined from GID measurement as a function of the overgrowth thickness h. (b) The variation of the efficiency of the SiN_x nano-mask in dislocation reduction with overgrowth thickness h.