Figure 3
Lattice parameter evaluation of an a-ZnO layer on r-sapphire. (a) Measured reflections 004, 110 and [1\overline{1} 0] and crystallographic axes a, b and c of an a-ZnO heteroepitaxial layer on r-sapphire substrate. (b) Dependency of relaxations R1, R2, strains [\epsilon_1], [\epsilon_2] and mismatches [\xi_1], [\xi_2] in two azimuthal directions [001] and [[1 \overline{1} 0]] of an a-ZnO heteroepitaxial layer on r-sapphire on growth temperature. (c) Dependency of crystallographic cell parameters (a, b, c, [gamma]) of an a-ZnO heteroepitaxial layer on r-sapphire on growth temperature. Bulk (relaxed) cell parameters (a, b, c) of ZnO are shown for eye guidance.  [article HTML]