Figure 4
Contour plots of experimentally recorded intensity distribution from 004 (a)-(c), 224+ (d)-(f) and 224- (g)-(i) reflections of Si0.4Ge0.6 epilayers on Si substrates. (a), (d) and (g) are for the sample with the layer thickness equal to 50 nm; (b), (e) and (h) for 100 nm; and (c), (f) and (i) for 200 nm. [q_{x} = 2\pi q_{x}]. The intensity changes between isointensity contours by a factor of two.  [article HTML]