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Figure 4
Contour plots of experimentally recorded intensity distribution from 004 (a)–(c), 224+ (d)–(f) and 224- (g)–(i) reflections of Si0.4Ge0.6 epilayers on Si substrates. (a), (d) and (g) are for the sample with the layer thickness equal to 50 nm; (b), (e) and (h) for 100 nm; and (c), (f) and (i) for 200 nm. [q_{x} = 2\pi q_{x}]. The intensity changes between isointensity contours by a factor of two.

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