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Figure 4
RSMs of the InAs 331 reflection from samples (A)–(D): the inclination of the NW reflection indicates the angular distribution of NW orientation; the vertical strikes observed independent of doping are coming from crystallites; in the case of samples grown on etched SiOx layers and with Si doping, the slight shift of the additional peak along the diagonal (black) line indicates a structure with different lattice parameter from InAs.

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