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Figure 3
Symmetric Si(004) RSMs measured for the as-implanted sample (a), and samples annealed at 873 K (b), 973 K (c) and 1173 K (d). The increase of XRDS around the reciprocal-lattice point after annealing at 973 K can be caused by clusterization of radiation-induced point defects and implanted Zn atoms.

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