Figure 3
Variations of reflected Ir (solid line) and forward-diffracted Ifd (dashed line) intensities as a function of [\Delta\theta] = [\theta-\theta_{\rm{B}}], where [\theta] is the incident angle and [\theta_{\rm{B}}] = 45°. Calculations were performed using the XOP 2.11 package (Dejus & Sanchez del Rio, 1996BB8) at E = 8.39 keV for a symmetric Si(511) oriented in (a) Laue geometry with a crystal thickness t = 19 µm and (b) Bragg geometry with t = 6 µm.  [article HTML]