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Figure 4
Calculation results of the impurity concentration in salt conditions in the homogeneous (solid) and diffusive (dotted) model in the transient state. (a) Time course of the impurity concentration on the crystal surface. (b) Impurity concentration around the growing crystal. R: radius of the crystal (mm); Ci(t): concentration of the impurity on the surface of the crystal (mg ml−1); Cicryst(R): concentration of the impurity in the crystal at R from the centre of the crystal; t: time after the crystal starts growing.

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