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Figure 4
Calculation results of the impurity concentration in salt conditions in the homogeneous (solid) and diffusive (dotted) model in the transient state. (a) Time course of the impurity concentration on the crystal surface. (b) Impurity concentration around the growing crystal. R: radius of the crystal (mm); Ci(t): concentration of the impurity on the surface of the crystal (mg ml−1); Cicryst(R): concentration of the impurity in the crystal at R from the centre of the crystal; t: time after the crystal starts growing.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 20| Part 6| October 2013| Pages 1003-1009
doi:10.1107/S0909049513022784
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