Different forms of antiparallel stacking of hydrogen-bonded antidromic rings in the solid state: polymorphism with virtually the same unit cell and two-dimensional isostructurality with alternating layers

Kálmán, A.; Fábián, L.; Argay, G.; Bernáth, G.; Gyarmati, Z.Cs.

doi:10.1107/S0108768104024553

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 3
Modeling of the three modes of layer stacking. Each arrow (black or white) represents a heterochiral layer of R₄⁴(18) tetramers. (a) In (1) antiparallel layer stacking is formed via centers of symmetry. (b) In (2b) the layers are antiparallel via the screw axes which are perpendicular to the dipole vectors. (c) In (2a) the layers are parallel via the screw axes (indicated by a slight shift between the arrows), which are parallel to the dipole vectors. The domains formed by parallel layers are stacked upon each other in an antiparallel mode. Consequently, each boundary (shown by the `perpendicular' screw axis) between the antiparallel domains is a double layer of (2b). (d) With an increasing number of boundaries the quality of the (2a) crystals diminishes.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 60| Part 6| November 2004| Pages 755-762

doi:10.1107/S0108768104024553

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