Structural characterization of a new high-pressure phase of GaAsO4

Santamaría-Pérez, D.; Haines, J.; Amador, U.; Morán, E.; Vegas, A.

doi:10.1107/S0108768106039760

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 2
Complementary octahedral layers present in the P3 GaAsO₄ structure. (a) This layer corresponds to the cations at z ≃ 0.5 and is made up of 12-membered rings of [XO₆] octahedra (X = As, Ga) sharing edges. (b) The cations of this layer are situated at z ≃ 0. The layer consists of groups of four [XO₆] octahedra (X = As, Ga) in which a central [AsO₆] octahedron shares edges with three adjacent [GaO₆] octahedra.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 62| Part 6| November 2006| Pages 1019-1024

doi:10.1107/S0108768106039760

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