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Figure 10
RHEED patterns obtained in the [110] direction of the substrate after growth of Gd2O3 on Si(001) at 850°C with an oxygen partial pressure of (a) 2 × 10−7 mbar and (b) 5 × 10−7 mbar. |
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Figure 10
RHEED patterns obtained in the [110] direction of the substrate after growth of Gd2O3 on Si(001) at 850°C with an oxygen partial pressure of (a) 2 × 10−7 mbar and (b) 5 × 10−7 mbar. |