Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

Gribisch, P.; Schmidt, J.; Osten, H.-J.; Fissel, A.

doi:10.1107/S2052520618017869

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 11
(a) Symmetric 2θ/ω measurements of the Gd₂O₃ grown at 850°C with 2 × 10⁻⁷ mbar and with 5 × 10⁻⁷ mbar oxygen partial pressure. (b) Detailed symmetric 2θ/ω measurement with improved signal-to-noise ratio of the reflection around 32° of the Gd₂O₃ grown at 850°C and 2 × 10⁻⁷ mbar oxygen partial pressure.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 75| Part 1| February 2019| Pages 59-70

https://doi.org/10.1107/S2052520618017869

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