Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

Gribisch, P.; Schmidt, J.; Osten, H.-J.; Fissel, A.

doi:10.1107/S2052520618017869

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 12
φ scan in GIXRD configuration around the 400 reflection which indicates a growth in two orthogonal in-plane domains. The small peaks at a separation of 45° from the higher intensity peaks probably result from Si(002) in-plane reflections.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 75| Part 1| February 2019| Pages 59-70

https://doi.org/10.1107/S2052520618017869

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