Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

Gribisch, P.; Schmidt, J.; Osten, H.-J.; Fissel, A.

doi:10.1107/S2052520618017869

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 13
(a, b) Schematic drawing of the arrangement of the (110) oriented Gd₂O₃ with respect to oriented (2 × 1) reconstructed Si(001) surfaces on the different terraces, where open circles represent the relaxed position of Si surface atoms within the (2 × 1) reconstruction on the (001) plane. The full circles represent the position of the oxide atoms of Gd₂O₃ in the (110) orientation (Osten et al., 2007

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 75| Part 1| February 2019| Pages 59-70

https://doi.org/10.1107/S2052520618017869

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