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Figure 2
HRXRD measurements in symmetric 2θ/ω geometry of Gd2O3 layers grown at 250°C. (a) Without additional oxygen supply (5 × 10−8 mbar) and with additional oxygen partial pressure (2 × 10−7 mbar). In (b) a detailed symmetric 2θ/ω measurement with improved signal to noise ratio of the reflection at 2θ ≃ 30° from the symmetric 2θ/ω measurement in (a) is shown. The side intensity on the left side of the Si(002) reflection in (b) could be attributed to Umweganregung (Zaumseil, 2015BB65).

Journal logoSTRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS
ISSN: 2052-5206
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