Figure 2
HRXRD measurements in symmetric 2θ/ω geometry of Gd2O3 layers grown at 250°C. (a) Without additional oxygen supply (5 × 10−8 mbar) and with additional oxygen partial pressure (2 × 10−7 mbar). In (b) a detailed symmetric 2θ/ω measurement with improved signal to noise ratio of the reflection at 2θ ≃ 30° from the symmetric 2θ/ω measurement in (a) is shown. The side intensity on the left side of the Si(002) reflection in (b) could be attributed to Umweganregung (Zaumseil, 2015). |