Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

Gribisch, P.; Schmidt, J.; Osten, H.-J.; Fissel, A.

doi:10.1107/S2052520618017869

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 5
GIXRD measurements of the Gd₂O₃ layer grown at 250°C with additional oxygen partial pressure (2 × 10⁻⁷ mbar) in the [110] in-plane direction and 30° rotated to the [110] direction. The dashed lines indicate the calculated bulk values for peak positions corresponding to different net planes of the monoclinic phase.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 75| Part 1| February 2019| Pages 59-70

https://doi.org/10.1107/S2052520618017869

Follow Acta Cryst. B

Search IUCr Journals		doi		Advanced search
Author		volume	page