Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)

Gribisch, P.; Schmidt, J.; Osten, H.-J.; Fissel, A.

doi:10.1107/S2052520618017869

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 9
AFM images of Gd₂O₃ samples grown at 250°C with additional oxygen supply: (a) 2 × 10⁻⁷ mbar, (b) without additional oxygen and 5 × 10⁻⁸ mbar growth pressure (c) 2 × 10⁻⁷ mbar and temperature ramp up during growth.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 75| Part 1| February 2019| Pages 59-70

https://doi.org/10.1107/S2052520618017869

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