Structure variations within RSi2 and R2Si3 silicides. Part II. Structure driving factors

Nentwich, M.; Zschornak, M.; Sonntag, M.; Gumeniuk, R.; Gemming, S.; Leisegang, T.; Meyer, D. C.

doi:10.1107/S2052520620003893

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 22
Influence of the valence electron concentration on the lattice parameters of R₂TSi₃ compounds, for a constant R element and at least five different T elements. (a) R = La, hexagonal , (b) R = Ce, hexagonal, (c) R = Eu, hexagonal, (d) R = Dy, hexagonal, (e) R = U, hexagonal and (f) R = Th, tetragonal.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 76| Part 3| June 2020| Pages 378-410

https://doi.org/10.1107/S2052520620003893

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