Structure variations within RSi2 and R2Si3 silicides. Part II. Structure driving factors

Nentwich, M.; Zschornak, M.; Sonntag, M.; Gumeniuk, R.; Gemming, S.; Leisegang, T.; Meyer, D. C.

doi:10.1107/S2052520620003893

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 25
Influence of the valence electron amount on the lattice parameters of ThSi₂-like RSi₂ and R₂TSi₃ compounds, for R elements with similar radii and constant T element. (a) R^t,1 = Ca, La, Eu, Yb, T = Si and (b) R^t,2 = U, Np, Pu, T = Si.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 76| Part 3| June 2020| Pages 378-410

https://doi.org/10.1107/S2052520620003893

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