Structure variations within RSi2 and R2Si3 silicides. Part II. Structure driving factors

Nentwich, M.; Zschornak, M.; Sonntag, M.; Gumeniuk, R.; Gemming, S.; Leisegang, T.; Meyer, D. C.

doi:10.1107/S2052520620003893

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

IUCr IT WDC

home archive editors for authors for readers submit subscribe open access

view article

Figure 5
Correlations between the shortest Si—T distance d and the lattice parameter c. For ThSi₂-like compounds c ∝ d by definition. The d value of AlB₂-like compounds is separated in RSi₂ compounds < 2.25 Å and R₂TSi₃ compounds > 2.28 Å.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 76| Part 3| June 2020| Pages 378-410

https://doi.org/10.1107/S2052520620003893

Open

access

Follow Acta Cryst. B

Search IUCr Journals		doi		Advanced search
Author		volume	page