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Figure 14
Core-shell GaAs–In0.2Ga0.8As zb-NWire with a [111] growth axis and {110} inter­faces [Balaghi et al. (2019BB2); reproduced with kind permission of Springer Nature, copyright 2019]. (a) Original elemental distribution in NWire cross section obtained by energy-dispersive X-ray spectroscopy. (b) Transmission electron micropscopy image of the NWire region around the inter­nal inter­face between GaAs and In0.2Ga0.8As, as shown by the yellow square in part (a). The inter­face is monocrystalline and assumed to be atomically flat. (c) Core-shell NWire cross section with inter­faces illustrated and labelled for crystallographic analysis as per number series in Section 4.4[link].

Journal logoSTRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS
ISSN: 2052-5206
Volume 78| Part 4| August 2022| Pages 643-664
https://doi.org/10.1107/S2052520622004942
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