Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

Martinez-Tomas, M.C.; Klymov, O.; Shimazoe, K.; Sánchez-Royo, J.-F.; Changarath, M. E.; Agouram, S.; Muñoz-Sanjosé, V.

doi:10.1107/S2052520624000441

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 3
(a) Epitaxial relationships between a-ZnO film and r-sapphire substrate. (b) Calculated crystallite size as a function of the layer thickness for different inclination angles, at the φ angle of the m-axis. (c) Surface unit cell: sapphire (grey rectangle), undistorted ZnO (dotted line), distorted ZnO (solid line); indicated dimensions correspond to undistorted cells but lines are not to scale. (d) ZnO basal plane: undistorted ZnO with a perfect hexagonal shape (dotted line), distorted ZnO (solid line).

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 2| April 2024| Pages 72-83

https://doi.org/10.1107/S2052520624000441

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