Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

Martinez-Tomas, M.C.; Klymov, O.; Shimazoe, K.; Sánchez-Royo, J.-F.; Changarath, M. E.; Agouram, S.; Muñoz-Sanjosé, V.

doi:10.1107/S2052520624000441

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 4
Evolution of periodicities along the orthorhombic axes as a function of film thickness: (a) out-of-plane ZnO $[[1{1\bar 2}0]]$ , (b) in-plane ZnO $[[{\bar 1}100]]$ and (c) in-plane [0001] directions; (d) a and (e) γ unit-cell parameters; (f) unit-cell volume. Particular uncertainty has been indicated for each point; when error bars are not seen, it is because uncertainty is lower than the size of the symbol.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 2| April 2024| Pages 72-83

https://doi.org/10.1107/S2052520624000441

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