Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition

Martinez-Tomas, M.C.; Klymov, O.; Shimazoe, K.; Sánchez-Royo, J.-F.; Changarath, M. E.; Agouram, S.; Muñoz-Sanjosé, V.

doi:10.1107/S2052520624000441

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 5
(a) Strain along the three orthogonal axes as a function of film thickness. (b) Anisotropy of the two in-plane strains, defined as the ratio between them. (c) Strain balance along the three orthogonal axes. Where error bars are not seen, it is because they are smaller than the size of the symbol.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 2| April 2024| Pages 72-83

https://doi.org/10.1107/S2052520624000441

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