Crystal structures of two new high-pressure oxynitrides with composition SnGe4N4O4, from single-crystal electron diffraction

Gollé-Leidreiter, P.; Bhat, S.; Wiehl, L.; Wen, Q.; Kroll, P.; Ishikawa, R.; Etter, M.; Farla, R.; Ikuhara, Y.; Riedel, R.; Kolb, U.

doi:10.1107/S2052520624002683

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 2
EDX spectrum up to 12 kV of the novel Ge-rich phase from #HH228. C, Cu and Si peaks originate from the TEM grid and the Si(Li)-EDX detector, respectively.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 3| June 2024| Pages 182-192

https://doi.org/10.1107/S2052520624002683

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