Crystal structures of two new high-pressure oxynitrides with composition SnGe4N4O4, from single-crystal electron diffraction

Gollé-Leidreiter, P.; Bhat, S.; Wiehl, L.; Wen, Q.; Kroll, P.; Ishikawa, R.; Etter, M.; Farla, R.; Ikuhara, Y.; Riedel, R.; Kolb, U.

doi:10.1107/S2052520624002683

Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS

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Figure 9
Comparison between the stacking of the anion layers of (a) the rhombohedral phase and (b) the basic nolanite type. The dotted arrows indicate the position of the cations. The O symbol denotes the presence of an O-layer and whether a Ge2 or a Ge3 atom is present. A triangle marks a T₁-layer, with the direction of the tip of the triangle indicating the orientation of the GeN₄ tetrahedron. Shown are the stacking vectors between the different layers and the resulting hexagonal (hcp) or cubic (ccp) close-packing sequences. In the legend (right-hand side), both the ABC and the Jagodzinski (1949

) notation are given.

STRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS

ISSN: 2052-5206

Volume 80| Part 3| June 2024| Pages 182-192

https://doi.org/10.1107/S2052520624002683

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