Acta Crystallographica Section B
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS
Acta Crystallographica
Section B STRUCTURAL SCIENCE, CRYSTAL ENGINEERING AND MATERIALS
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![[Figure 3]](dk5150fig3mag.jpg)
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Figure 3
Selected section of the three-dimensionally periodic average crystal structure of Rb2[Si2O5] refined from main reflections hkl0, that is disregarding scattering information from the satellite reflections hklm. Top view along the b axis. Bottom view approximately along the c axis. Yellow and orange colors for polyhedra around Si1av and Si2av respectively; displacement ellipsoids for oxygen atoms (red) are shown at the 50% probability level. O4av–O4av, O5av–O5av and O6av–O7av have an occupancy of 0.5 and have to be considered as split atom position with a disordered arrangement. With this assumption [SiO4] tetrahedra share corners to form chains along the a direction. |
![[Figure 3]](dk5150fig3.jpg)
| STRUCTURAL SCIENCE CRYSTAL ENGINEERING MATERIALS |
ISSN: 2052-5206
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