Figure 4
Fluorescence and absorption effects of the diffraction pattern from an XI crystal in 2 M (NH4)2SeO4 recorded at four different wavelengths about the Se K-edge and of the same region of reciprocal space. (a) Low-energy remote, 12 500 eV; (b) inflection point, 12 657.5 eV; (c) peak fluorescence, 12 660 eV; (d) high-energy remote, 12 663 eV. |