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Figure 2
A silicon chip exposed to an unattenuated XFEL beam at 7.3 keV photon energy at SACLA. The beam (1.4 × 1.6 µm FWHM) was centred in the wells (7 × 7 µm). Nevertheless, significant damage to the chip was observed. The chip is shown from the back after exposure. The scattered silicon powder resulted in significant diffraction. In some chips, the accumulated stress was so large that the chip fractured. The orange scale bar corresponds to 100 µm.

Journal logoSTRUCTURAL
ISSN: 2059-7983
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