Download citation
Download citation
link to html
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of CdS quantum dots (QDs) from Cd and S atoms implanted in SiO2. For a dose of 1017/cm2, the partial synthesis of CdS QDs occurred already during implantation, with only moderate size increase upon subsequent annealing up to Ta=1073 K. The dynamics of QD synthesis and growth were considerably different for just two times lower dose, where synthesis started only if the implanted samples were annealed at Ta = 773 K or higher, with a strong increase of the size of QDs upon annealing at higher Ta. The results suggest that high-dose implantation followed by low-temperature annealing could lead to better defined sizes and narrower size distributions of QDs.

Follow J. Appl. Cryst.
Sign up for e-alerts
Follow J. Appl. Cryst. on Twitter
Follow us on facebook
Sign up for RSS feeds