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Ethyl propionate, C5H10O2 (m.p. 199 K), has been in-situ pressure-frozen and its structure determined at 1.34, 1.98 and 2.45 GPa. The crystal structure of the new high-pressure phase (denoted β) is different from phase α obtained by lowering the temperature. The freezing pressure of ethyl propionate at 296 K is 1.03 GPa. The molecule assumes an extended chain s-trans–trans–trans conformation, only slightly distorted from planarity. The closest intermolecular contacts in both phases are formed between carbonyl O and methyl H atoms; however, the ethyl-group H atoms in phase β form no contacts shorter than 2.58 Å. A considerable molecular volume difference of 24.2 Å3 between phases α and β can be rationalized in terms of degrees of freedom of molecules arranged into closely packed structures: the three degrees of freedom allowed for rearrangements of molecules confined to planar sheets in phase α, but are not sufficient for obtaining a densely packed pattern.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S010876810603477X/av5069sup1.cif
Contains datablocks ethylpropionate1, ethylpropionate2, ethylpropionate3

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S010876810603477X/av50691_34GPasup2.hkl
Contains datablock 1_34GPa

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S010876810603477X/av50691_98GPasup3.hkl
Contains datablock 1_98GPa

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S010876810603477X/av50692_45GPasup4.hkl
Contains datablock 2_45GPa

CCDC references: 637747; 637748; 637749

Computing details top

For all compounds, data collection: CrysAlis (Oxford Diffraction, 2003); cell refinement: CrysAlis (Oxford Diffraction, 2003); data reduction: CrysAlis (Oxford Diffraction, 2003); program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: XP (Siemens, 1990); software used to prepare material for publication: SHELXL97 (Sheldrick, 1997).

Figures top
[Figure 1]
[Figure 2]
[Figure 3]
[Figure 4]
[Figure 5]
[Figure 6]
[Figure 7]
[Figure 8]
[Figure 9]
(ethylpropionate1) ethyl propionate top
Crystal data top
C5H10O2Dx = 1.300 Mg m3
Mr = 102.13Melting point: 198 K
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
a = 4.9347 (10) ÅCell parameters from 1085 reflections
b = 9.4163 (19) Åθ = 3.6–27.3°
c = 11.321 (2) ŵ = 0.10 mm1
β = 97.39 (3)°T = 293 K
V = 521.70 (18) Å3Cylinder, colourless
Z = 40.36 × 0.28 × 0.15 mm
F(000) = 224
Data collection top
Kuma KM4CCD κ geometry
diffractometer
316 independent reflections
Radiation source: fine-focus sealed tube259 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.142
ω scansθmax = 27.3°, θmin = 3.6°
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
h = 66
Tmin = 0.68, Tmax = 0.96k = 55
1838 measured reflectionsl = 1313
Refinement top
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.099H-atom parameters constrained
wR(F2) = 0.270 w = 1/[σ2(Fo2) + (0.1734P)2]
where P = (Fo2 + 2Fc2)/3
S = 1.25(Δ/σ)max < 0.001
316 reflectionsΔρmax = 0.15 e Å3
60 parametersΔρmin = 0.16 e Å3
0 restraintsExtinction correction: SHELXL, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.22 (11)
Crystal data top
C5H10O2V = 521.70 (18) Å3
Mr = 102.13Z = 4
Monoclinic, P21/cMo Kα radiation
a = 4.9347 (10) ŵ = 0.10 mm1
b = 9.4163 (19) ÅT = 293 K
c = 11.321 (2) Å0.36 × 0.28 × 0.15 mm
β = 97.39 (3)°
Data collection top
Kuma KM4CCD κ geometry
diffractometer
316 independent reflections
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
259 reflections with I > 2σ(I)
Tmin = 0.68, Tmax = 0.96Rint = 0.142
1838 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0990 restraints
wR(F2) = 0.270H-atom parameters constrained
S = 1.25Δρmax = 0.15 e Å3
316 reflectionsΔρmin = 0.16 e Å3
60 parameters
Special details top

Experimental. High-pressure measurement at 1.34 GPa.

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
O20.2180 (7)0.6154 (7)0.3982 (3)0.054 (5)
O10.0305 (8)0.7862 (8)0.3083 (3)0.072 (4)
C30.2673 (14)0.8538 (13)0.5166 (7)0.076 (7)
H3A0.30680.86610.59680.115*
H3B0.42940.82320.46710.115*
H3C0.20620.94230.48730.115*
C20.0525 (11)0.7463 (11)0.5145 (5)0.051 (6)
H2A0.11810.65760.54390.061*
H2B0.10480.77540.56950.061*
C10.0386 (11)0.7196 (12)0.3971 (5)0.045 (2)*
C40.3291 (12)0.5829 (10)0.2907 (5)0.059 (5)
H4A0.41100.66740.26140.070*
H4B0.18440.55120.23030.070*
C50.5350 (10)0.4719 (14)0.3134 (5)0.055 (6)
H5A0.60900.45040.24110.082*
H5B0.45290.38810.34160.082*
H5C0.67890.50410.37250.082*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
O20.059 (3)0.068 (16)0.039 (4)0.011 (3)0.019 (2)0.002 (2)
O10.077 (3)0.090 (13)0.054 (3)0.029 (4)0.025 (2)0.022 (3)
C30.057 (4)0.11 (2)0.069 (6)0.008 (5)0.033 (3)0.007 (5)
C20.062 (4)0.05 (2)0.044 (4)0.016 (5)0.019 (3)0.013 (4)
C40.063 (4)0.08 (2)0.034 (4)0.005 (5)0.025 (3)0.011 (3)
C50.053 (4)0.06 (2)0.060 (4)0.010 (4)0.024 (3)0.002 (4)
Geometric parameters (Å, º) top
O2—C11.320 (11)C3—C21.468 (12)
O2—C41.431 (6)C2—C11.479 (8)
O1—C11.197 (9)C4—C51.457 (12)
C1—O2—C4118.8 (5)O1—C1—C2125.4 (9)
C3—C2—C1115.8 (6)O2—C1—C2113.5 (6)
O1—C1—O2121.0 (6)O2—C4—C5109.7 (5)
C4—O2—C1—O10.1 (12)C3—C2—C1—O2175.6 (8)
C4—O2—C1—C2177.7 (6)C1—O2—C4—C5176.2 (7)
C3—C2—C1—O16.9 (13)
(ethylpropionate2) ethyl propionate top
Crystal data top
C5H10O2Dx = 1.319 Mg m3
Mr = 102.13Melting point: 198 K
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
a = 4.8917 (10) ÅCell parameters from 1777 reflections
b = 9.3649 (19) Åθ = 2.8–24.8°
c = 11.318 (2) ŵ = 0.10 mm1
β = 97.24 (3)°T = 293 K
V = 514.35 (18) Å3Cylinder, colourless
Z = 40.36 × 0.28 × 0.14 mm
F(000) = 224
Data collection top
Kuma KM4CCD κ geometry
diffractometer
283 independent reflections
Radiation source: fine-focus sealed tube264 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.059
ω scansθmax = 24.8°, θmin = 2.8°
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
h = 55
Tmin = 0.67, Tmax = 0.97k = 66
2054 measured reflectionsl = 1111
Refinement top
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.054H-atom parameters constrained
wR(F2) = 0.107 w = 1/[σ2(Fo2) + (0.048P)2 + 0.3823P]
where P = (Fo2 + 2Fc2)/3
S = 1.20(Δ/σ)max < 0.001
283 reflectionsΔρmax = 0.12 e Å3
71 parametersΔρmin = 0.10 e Å3
0 restraintsExtinction correction: SHELXL, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.02 (2)
Crystal data top
C5H10O2V = 514.35 (18) Å3
Mr = 102.13Z = 4
Monoclinic, P21/cMo Kα radiation
a = 4.8917 (10) ŵ = 0.10 mm1
b = 9.3649 (19) ÅT = 293 K
c = 11.318 (2) Å0.36 × 0.28 × 0.14 mm
β = 97.24 (3)°
Data collection top
Kuma KM4CCD κ geometry
diffractometer
283 independent reflections
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
264 reflections with I > 2σ(I)
Tmin = 0.67, Tmax = 0.97Rint = 0.059
2054 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0540 restraints
wR(F2) = 0.107H-atom parameters constrained
S = 1.20Δρmax = 0.12 e Å3
283 reflectionsΔρmin = 0.10 e Å3
71 parameters
Special details top

Experimental. High-pressure measurement at 1.98 GPa.

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
O20.2191 (5)0.6138 (4)0.3997 (2)0.0326 (16)
O10.0346 (6)0.7876 (5)0.3074 (3)0.048 (2)
C30.2739 (8)0.8572 (9)0.5161 (4)0.038 (3)
H3A0.31840.86600.59600.057*
H3B0.43060.82070.46550.057*
H3C0.22500.94910.48770.057*
C20.0575 (8)0.7443 (6)0.5151 (3)0.037 (3)
H2A0.09980.77020.57200.045*
H2B0.13000.65500.54130.045*
C10.0381 (8)0.7217 (7)0.3969 (4)0.028 (3)
C40.3324 (7)0.5843 (6)0.2900 (3)0.030 (2)
H4A0.41510.66990.26180.036*
H4B0.18800.55240.22910.036*
C50.5431 (7)0.4714 (7)0.3152 (3)0.029 (2)
H5A0.63540.45840.24590.044*
H5B0.46140.38280.33490.044*
H5C0.67380.50190.38080.044*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
O20.0383 (15)0.037 (6)0.023 (3)0.0107 (19)0.0080 (11)0.0023 (11)
O10.0511 (18)0.067 (8)0.030 (4)0.024 (2)0.0143 (14)0.0162 (18)
C30.038 (2)0.033 (12)0.045 (4)0.004 (3)0.0144 (18)0.0010 (19)
C20.041 (2)0.049 (13)0.023 (5)0.008 (3)0.0097 (17)0.0027 (17)
C10.0259 (18)0.031 (12)0.027 (4)0.008 (3)0.0015 (15)0.000 (2)
C40.0325 (19)0.031 (10)0.027 (4)0.008 (3)0.0061 (15)0.0010 (17)
C50.031 (2)0.020 (10)0.039 (4)0.003 (2)0.0094 (16)0.0028 (17)
Geometric parameters (Å, º) top
O2—C11.341 (6)C3—C21.497 (7)
O2—C41.449 (4)C2—C11.486 (6)
O1—C11.202 (6)C4—C51.479 (7)
C1—O2—C4116.5 (3)O1—C1—C2126.3 (6)
C1—C2—C3114.2 (4)O2—C1—C2111.6 (4)
O1—C1—O2122.1 (4)O2—C4—C5107.7 (3)
C4—O2—C1—O12.6 (6)C3—C2—C1—O2176.2 (4)
C4—O2—C1—C2178.4 (3)C1—O2—C4—C5175.1 (4)
C3—C2—C1—O12.7 (7)
(ethylpropionate3) ethyl propionate top
Crystal data top
C5H10O2Dx = 1.346 Mg m3
Mr = 102.13Melting point: 198 K
Monoclinic, P21/cMo Kα radiation, λ = 0.71073 Å
a = 4.8455 (10) ÅCell parameters from 1559 reflections
b = 9.3249 (19) Åθ = 2.9–25.0°
c = 11.251 (2) ŵ = 0.10 mm1
β = 97.52 (3)°T = 293 K
V = 504.00 (18) Å3Cylinder, colourless
Z = 40.36 × 0.28 × 0.13 mm
F(000) = 224
Data collection top
Kuma KM4CCD κ geometry
diffractometer
299 independent reflections
Radiation source: fine-focus sealed tube268 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.047
ω scansθmax = 25.0°, θmin = 2.9°
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
h = 55
Tmin = 0.68, Tmax = 0.97k = 66
2119 measured reflectionsl = 1111
Refinement top
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullHydrogen site location: inferred from neighbouring sites
R[F2 > 2σ(F2)] = 0.048H-atom parameters constrained
wR(F2) = 0.119 w = 1/[σ2(Fo2) + (0.0645P)2 + 0.3573P]
where P = (Fo2 + 2Fc2)/3
S = 1.14(Δ/σ)max < 0.001
299 reflectionsΔρmax = 0.13 e Å3
71 parametersΔρmin = 0.14 e Å3
0 restraintsExtinction correction: SHELXL, Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
Primary atom site location: structure-invariant direct methodsExtinction coefficient: 0.04 (3)
Crystal data top
C5H10O2V = 504.00 (18) Å3
Mr = 102.13Z = 4
Monoclinic, P21/cMo Kα radiation
a = 4.8455 (10) ŵ = 0.10 mm1
b = 9.3249 (19) ÅT = 293 K
c = 11.251 (2) Å0.36 × 0.28 × 0.13 mm
β = 97.52 (3)°
Data collection top
Kuma KM4CCD κ geometry
diffractometer
299 independent reflections
Absorption correction: analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.
Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467
268 reflections with I > 2σ(I)
Tmin = 0.68, Tmax = 0.97Rint = 0.047
2119 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0480 restraints
wR(F2) = 0.119H-atom parameters constrained
S = 1.14Δρmax = 0.13 e Å3
299 reflectionsΔρmin = 0.14 e Å3
71 parameters
Special details top

Experimental. High-pressure measurement at 2.45 GPa.

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
O20.2203 (5)0.6135 (4)0.3999 (2)0.0334 (14)
O10.0367 (6)0.7880 (5)0.3066 (3)0.0480 (19)
C30.2768 (8)0.8585 (8)0.5162 (4)0.039 (2)
H3A0.32900.86660.59540.058*
H3B0.43420.82710.46170.058*
H3C0.21540.95010.49100.058*
C20.0585 (7)0.7448 (6)0.5156 (3)0.0369 (19)
H2A0.10080.77100.57290.044*
H2B0.13180.65530.54220.044*
C10.0373 (8)0.7212 (7)0.3967 (4)0.032 (2)
C40.3332 (7)0.5842 (5)0.2896 (3)0.032 (2)
H4A0.41620.67030.26140.038*
H4B0.18660.55240.22830.038*
C50.5464 (7)0.4708 (7)0.3147 (3)0.034 (2)
H5A0.63870.45480.24540.051*
H5B0.46220.38310.33650.051*
H5C0.67940.50270.38020.051*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
O20.0365 (15)0.041 (5)0.025 (3)0.0102 (17)0.0101 (11)0.0022 (10)
O10.0512 (18)0.060 (7)0.036 (3)0.025 (2)0.0150 (15)0.0168 (16)
C30.037 (2)0.033 (9)0.050 (4)0.003 (3)0.0155 (18)0.0031 (19)
C20.041 (2)0.044 (8)0.027 (4)0.006 (3)0.0109 (17)0.0009 (17)
C10.0270 (19)0.041 (10)0.028 (5)0.007 (3)0.0043 (16)0.001 (2)
C40.0333 (18)0.036 (9)0.027 (4)0.004 (2)0.0087 (16)0.0004 (15)
C50.029 (2)0.038 (9)0.037 (4)0.005 (2)0.0091 (15)0.0014 (17)
Geometric parameters (Å, º) top
O2—C11.337 (6)C3—C21.498 (7)
O2—C41.445 (4)C2—C11.489 (6)
O1—C11.204 (6)C4—C51.479 (7)
C1—O2—C4116.3 (3)O1—C1—C2125.9 (5)
C1—C2—C3114.4 (4)O2—C1—C2111.8 (4)
O1—C1—O2122.3 (4)O2—C4—C5107.7 (3)
C4—O2—C1—O12.1 (6)C3—C2—C1—O2176.6 (4)
C4—O2—C1—C2178.2 (3)C1—O2—C4—C5175.3 (4)
C3—C2—C1—O13.1 (7)

Experimental details

(ethylpropionate1)(ethylpropionate2)(ethylpropionate3)
Crystal data
Chemical formulaC5H10O2C5H10O2C5H10O2
Mr102.13102.13102.13
Crystal system, space groupMonoclinic, P21/cMonoclinic, P21/cMonoclinic, P21/c
Temperature (K)293293293
a, b, c (Å)4.9347 (10), 9.4163 (19), 11.321 (2)4.8917 (10), 9.3649 (19), 11.318 (2)4.8455 (10), 9.3249 (19), 11.251 (2)
β (°) 97.39 (3) 97.24 (3) 97.52 (3)
V3)521.70 (18)514.35 (18)504.00 (18)
Z444
Radiation typeMo KαMo KαMo Kα
µ (mm1)0.100.100.10
Crystal size (mm)0.36 × 0.28 × 0.150.36 × 0.28 × 0.140.36 × 0.28 × 0.13
Data collection
DiffractometerKuma KM4CCD κ geometry
diffractometer
Kuma KM4CCD κ geometry
diffractometer
Kuma KM4CCD κ geometry
diffractometer
Absorption correctionAnalytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.

Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467

Analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.

Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467

Analytical
Katrusiak, A. (2003). REDSHADE - Program for correcting reflections intensities for DAC absorption, gasket shadowing and sample crystal absorption. Adam Mickiewicz University, Poznań.

Katrusiak, A. (2004). Z. Kristallogr. 219, 461-467

Tmin, Tmax0.68, 0.960.67, 0.970.68, 0.97
No. of measured, independent and
observed [I > 2σ(I)] reflections
1838, 316, 259 2054, 283, 264 2119, 299, 268
Rint0.1420.0590.047
(sin θ/λ)max1)0.6460.5900.594
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.099, 0.270, 1.25 0.054, 0.107, 1.20 0.048, 0.119, 1.14
No. of reflections316283299
No. of parameters607171
H-atom treatmentH-atom parameters constrainedH-atom parameters constrainedH-atom parameters constrained
Δρmax, Δρmin (e Å3)0.15, 0.160.12, 0.100.13, 0.14

Computer programs: CrysAlis (Oxford Diffraction, 2003), SHELXS97 (Sheldrick, 1997), SHELXL97 (Sheldrick, 1997), XP (Siemens, 1990).

 

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