Dependence of the strain diffraction line broadening on (hkl) and sample direction in textured polycrystals

A new phenomenological approach describing the dependence of the strain diffraction line breadth on direction in both crystal and sample is presented. For a negligibly small dependence on the direction in the sample, these models reduce to those for anisotropic strain broadening that already exist in the literature and which are implemented in popular Rietveld codes. The new model is appropriate for implementation in the Rietveld programs able to process simultaneously diffraction patterns recorded in multiple directions in a sample.