Structural and morphological investigation of amorphous hydrogenated silicon carbide

Amorphous hydrogenated silicon carbide thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) at temperatures ranging from 573 to 623 K, with different concentrations of silane and methane, exploring two deposition parameters: the radio frequency (r.f.) power and the hydrogen dilution. The aim of the work was to induce, predominantly, the formation of Si-C heteronuclear bonds in a homogeneous network. The composition was determined by Rutherford backscattering and the chemical bonding by Fourier transform infrared spectrometry. The local structural order was analyzed by means of extended X-ray absorption fine structure at the Si K edge. The morphology was investigated by small-angle X-ray scattering in order to determine the possible presence of voids in the amorphous matrix. The morphological investigation was completed by transmission electron microscopy. Better-structured films were obtained for a composition close to stoichiometry, grown with an r.f. power of 100 W and with 300 s.c.c.m. (standard cubic centimeter per minute) of hydrogen dilution.