On the Off-Bragg Reflectivity Enhancement in Dynamical Multiple Diffraction of X-rays by an In_0.5Ga_0.5P/GaAs Heteroepitaxial Structure

The effect of dynamical interactions between reflections involved in 000/111/220 multiple diffraction by an In_0.5Ga_0.5P/GaAs heteroepitaxial structure was observed, which significantly increases the intensity of the (111) reflection in the region of the total (220) reflection from the substrate during Renninger-like scanning. The amplitude of the peak is roughly five times as great as the peak of detoured excitation for ideal GaAs. Possible applications of the observed feature in synchrotron-radiation-based studies are discussed.